參數(shù)資料
型號(hào): MBM29F040A-90
廠商: Fujitsu Limited
英文描述: 4M (512K ×8) BIT Flash Memoery(512K ×8位 5V 電源電壓閃速存儲(chǔ)器)
中文描述: 4分(為512k × 8)位閃存Memoery(為512k × 8位5V的電源電壓閃速存儲(chǔ)器)
文件頁(yè)數(shù): 32/42頁(yè)
文件大小: 492K
代理商: MBM29F040A-90
32
MBM29F040A
-70/-90/-12
* :Device is either powered-down, erase inhibit or program inhibit.
Table 8 Embedded Programming Algorithm
Bus Operation
Command Sequence
Comment
Standby*
Write
Erase
Read
Data Polling to Verify Erasure
Standby*
Compare Output to FFH
Figure 13 Embedded Erase
TM
Algorithm
EMBEDDED ALGORITHMS
Start
5555H/AAH
2AAAH/55H
5555H/AAH
5555H/80H
5555H/10H
2AAAH/55H
5555H/AAH
2AAAH/55H
5555H/AAH
5555H/80H
2AAAH/55H
Additional sector
erase commands
are optional.
Write Erase Command
Sequece
(See below)
Data Polling or Toggle Bit
Successfully Completed
Erasure Completed
Chip Erase Command Sequence
(Address/Command):
Individual Sector/Multiple Sector
Erase Command Sequence
(Address/Command):
Sector Address/30H
Sector Address/30H
Sector Address/30H
相關(guān)PDF資料
PDF描述
MBM29F040A 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲(chǔ)器)
MBM29F040C 4M (512K X 8) BIT
MBM29F040C-55 Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-PDIP -40 to 85
MBM29F040C-55PD 4M (512K X 8) BIT
MBM29F040C-55PFTN Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F040A-90-X 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 4M 512K X 8 BIT
MBM29F040C 制造商:FUJRTSU 功能描述:
MBM29F040C-55 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PD 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-55PFTN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY 4M (512K x 8) BIT