參數(shù)資料
型號(hào)： MC8610TVT1066JB
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 19/96頁(yè)
文件大?。?/td> 0K
描述： MPU E600 CORE 1066MHZ 783-PBGA
標(biāo)準(zhǔn)包裝： 36
系列： MPC86xx
處理器類(lèi)型： 32-位 MPC86xx PowerPC
速度： 1.066GHz
電壓： 1V
安裝類(lèi)型： 表面貼裝
封裝/外殼： 783-BBGA，F(xiàn)CBGA
供應(yīng)商設(shè)備封裝： 783-FCPBGA（29x29）
包裝： 托盤(pán)
MPC8610 Integrated Host Processor Hardware Specifications, Rev. 2
Electrical Characteristics
Freescale Semiconductor
26
2.6.1
DDR SDRAM DC Electrical Characteristics
Table 14 provides the recommended operating conditions for the DDR2 SDRAM component(s) of the MPC8610 when
GVDD(typ) = 1.8 V.
Table 15 provides the DDR capacitance when GVDD(typ) = 1.8 V.
Table 16 provides the recommended operating conditions for the DDR SDRAM component(s) when GVDD(typ) = 2.5 V.
Table 14. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
1.71
1.89
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V2
I/O termination voltage
VTT
MVREF –0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF +0.125
GVDD +0.3
V
Input low voltage
VIL
–0.3
MVREF – 0.125
V
Output leakage current
IOZ
–50
50
μA4
Output high current (VOUT = 1.420 V)
IOH
–13.4
—
mA
Output low current (VOUT = 0.280 V)
IOL
13.4
—
mA
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
≤ VOUT ≤ GVDD.
Table 15. DDR2 SDRAM Capacitance for GVDD(typ)=1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, DQS
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS, DQS
CDIO
—0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 16. DDR SDRAM DC Electrical Characteristics for GVDD (typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
2.375
2.625
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.15
GVDD + 0.3
V
Input low voltage
VIL
–0.3
MVREF – 0.15
V
Output leakage current
IOZ
–50
50
μA4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC8610TVT1066JZ 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:MPC8610 Integrated Host Processor Hardware Specifications
MC8610TVT1067G 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications
MC8610TVT1067J 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:Integrated Host Processor Hardware Specifications
MC8610TVT1333JB 制造商:Freescale Semiconductor 功能描述:MPC8XXX RISC 32-BIT 0.09UM 1.333GHZ 1.8V/2.5V/3.3V 783-PIN B - Bulk
MC8610TVT667FB 功能描述:微處理器 - MPU REV 1.1 8610 1.0V -40C RoHS:否 制造商:Atmel 處理器系列:SAMA5D31 核心:ARM Cortex A5 數(shù)據(jù)總線寬度:32 bit 最大時(shí)鐘頻率:536 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:128 KB 接口類(lèi)型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作電源電壓:1.8 V to 3.3 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-324
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