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參數(shù)資料
| 型號： | MRD6S18060MR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 694K |
| 代理商： | MRD6S18060MR1 |
A
A
Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead-free
terminations.
MRF6S18060MR1 MRF6S18060MBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
GSM Application
Typical GSM Performance: V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 Watts
CW, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)
Power Gain — 15 dB
Drain Efficiency - 50%
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ
= 450 mA,
P
out
= 25 Watts Avg., Full Frequency Band (1805-1880 MHz or
1930-1990 MHz)
Power Gain — 15.5 dB
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -76 dBc
EVM — 2% rms
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
200
°
C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
216
1.2
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +175
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°
C, 60 W CW
Case Temperature 77
°
C, 25 W CW
R
θ
JC
0.81
0.95
°
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF6S18060
Rev. 2, 5/2006
Freescale Semiconductor
Technical Data
MRF6S18060MR1
MRF6S18060MBR1
1800-2000 MHz, 60 W, 26 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S18060MR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S18060MBR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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