參數(shù)資料
型號(hào)： MRD6S18060MR1
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁(yè)數(shù)： 4/20頁(yè)
文件大?。?/td> 694K
代理商： MRD6S18060MR1
A
A
4
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
Z1
Z2*
Z3*
Z4*
Z5
Z6
Z7, Z8
0.250
″
x 0.083
″
Microstrip
0.950
″
x 0.083
″
Microstrip
0.250
″
x 0.083
″
Microstrip
0.315
″
x 0.083
″
Microstrip
0.365
″
x 1.000
″
Microstrip
0.680
″
x 0.080
″
Microstrip
0.115
″
x 1.000
″
Microstrip
Z9
Z10*
Z11*
Z12
Z13
PCB
0.485
″
x 1.000
″
Microstrip
0.500
″
x 0.083
″
Microstrip
0.895
″
x 0.083
″
Microstrip
0.250
″
x 0.083
″
Microstrip
0.200
″
x 0.080
″
Microstrip
Taconic TLX8-0300, 0.030
″
,
ε
r
= 2.55
* Variable for tuning
Figure 1. MRF6S18060MR1(MBR1) Test Circuit Schematic — 1900 MHz
V
BIAS
RF
INPUT
RF
OUTPUT
Z1
C3
C4
Z3
DUT
Z9
Z10
Z11
C1
R3
C11
C9
+
Z2
R1
C10
V
SUPPLY
R2
C5
C6
Z8
C2
Z4
Z5
Z7
Z6
Z12
Z13
C7
C8
Table 6. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values — 1900 MHz
Part
Description
C1, C2, C3, C4
6.8 pF 100B Chip Capacitors
C5
1.5 pF 100B Chip Capacitor
C6
1.8 pF 100B Chip Capacitor
C7, C8
1 pF 100B Chip Capacitors
C9, C10
10
μ
F Chip Capacitors (2220)
C11
220
μ
F, 63 V Electrolytic Capacitor, Radial
R1, R2
10 k , 1/4 W Chip Resistors (1206)
R3
10 , 1/4 W Chip Resistor (1206)
Part Number
Manufacturer
ATC
ATC
ATC
ATC
TDK
Philips
100B6R8CW
100B1R5BW
100B1R8BW
100B1R0BW
C5750X5R1H106MT
13668221
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