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參數(shù)資料
| 型號： | MRD6S18060MR1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | 射頻功率場效應晶體管N溝道增強型MOSFET的外側(cè) |
| 文件頁數(shù)： | 12/20頁 |
| 文件大?。?/td> | 694K |
| 代理商： | MRD6S18060MR1 |
A
A
η
D
,
12
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
TYPICAL CHARACTERISTICS — 1800 MHz
G
p
,
I
f, FREQUENCY (MHz)
12
47
G
ps
V
DD
= 26 Vdc
I
DQ
= 600 mA
17
57
55
53
51
49
1920
IRL
Figure 17. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 60 Watts
16
0
4
8
12
20
η
D
,
16
15
14
13
η
D
1780
1800
1820
1840
1860
1880
1900
G
p
,
I
f, FREQUENCY (MHz)
12
1760
33
G
ps
V
DD
= 26 Vdc
I
DQ
= 600 mA
17
43
41
39
37
35
1920
IRL
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 30 Watts
16
0
4
8
12
20
η
D
,
16
15
14
13
η
D
1780
1800
1820
1840
1860
1880
1900
Figure 19. Error Vector Magnitude versus
Frequency
f, FREQUENCY (MHz)
P
out
= 35 W Avg.
25 W Avg.
15 W Avg.
V
DD
= 26 Vdc
I
DQ
= 450 mA
E
1920
0.5
4.5
1780
3
2.5
1.5
1860
1840
1820
1800
3.5
2
1880
4
1
1900
Figure 20. Error Vector Magnitude and Drain
Efficiency versus Output Power
P
out
, OUTPUT POWER (WATTS) AVG.
100
4
10
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1860 MHz
8
6
0
10
1
2
20
50
40
30
0
10
T
C
= 25 C
η
D
E
EVM
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