參數(shù)資料
型號: MRD6S18060MR1
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: 射頻功率場效應晶體管N溝道增強型MOSFET的外側(cè)
文件頁數(shù): 8/20頁
文件大小: 694K
代理商: MRD6S18060MR1
A
A
8
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
TYPICAL CHARACTERISTICS
210
1.E+09
90
T
J
, JUNCTION TEMPERATURE (
°
C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
100 110 120 130 140 150 160 170 180
1.E+08
1.E+06
1.E+07
Figure 13. MTTF Factor versus Junction Temperature
M
2
)
200
190
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