參數(shù)資料
型號(hào): MRD6S18060MR1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: 射頻功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁數(shù): 13/20頁
文件大?。?/td> 694K
代理商: MRD6S18060MR1
A
A
MRF6S18060MR1 MRF6S18060MBR1
13
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 1800 MHz
50
60
65
70
75
1780
80
Figure 21. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
S
1800
1820
1840
1860
V
DD
= 26 Vdc
I
DQ
= 450 mA
P
out
= 35 W Avg.
25 W Avg.
15 W Avg.
35 W Avg.
25 W Avg.
10 W Avg.
SR 400 kHz
SR 600 kHz
55
1880
1900
1920
T
C
= 25 C
75
45
0
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 22. Spectral Regrowth at 400 kHz
versus Output Power
50
55
60
65
70
10
S
20
30
40
50
60
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1860 MHz
T
C
= 25 C
85
60
0
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 23. Spectral Regrowth at 600 kHz
versus Output Power
70
75
80
10
S
20
30
40
50
60
V
DD
= 26 Vdc
I
DQ
= 450 mA
f = 1860 MHz
65
f, FREQUENCY (MHz)
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