參數(shù)資料
型號: MRD6S18060MR1
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: 射頻功率場效應(yīng)晶體管N溝道增強型MOSFET的外側(cè)
文件頁數(shù): 20/20頁
文件大?。?/td> 694K
代理商: MRD6S18060MR1
20
RF Device Data
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MRF6S18060MR1 MRF6S18060MBR1
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