參數(shù)資料
型號: MRD6S18060MR1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: 射頻功率場效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁數(shù): 3/20頁
文件大?。?/td> 694K
代理商: MRD6S18060MR1
A
A
MRF6S18060MR1 MRF6S18060MBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale Broadband Test Fixture, 50
ο
hm system) V
DD
= 26 Vdc, I
DQ
= 450 mA,
P
out
= 25 W Avg., 1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz
Power Gain
G
ps
15.5
dB
Drain Efficiency
η
D
32
%
Error Vector Magnitude
EVM
2
% rms
Spectral Regrowth at 400 kHz Offset
SR1
-62
dBc
Spectral Regrowth at 600 kHz Offset
SR2
-76
dBc
Typical CW Performances
(In Freescale Broadband Test Fixture, 50
ο
hm system) V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 W,
1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz
Power Gain
G
ps
η
D
15
dB
Drain Efficiency
50
%
Input Return Loss
IRL
-12
dB
P
out
@ 1 dB Compression Point, CW
P1dB
65
W
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