參數(shù)資料
型號： MT18VDVF6472DG-265XX
元件分類： DRAM
英文描述： 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
封裝： DIMM-184
文件頁數(shù)： 11/38頁
文件大?。?/td> 713K
代理商： MT18VDVF6472DG-265XX
PDF: 09005aef81c73825/Source: 09005aef81c73837
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DVF18C64_128x72D_2.fm - Rev. A 8/05 EN
19
2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM
Electrical Specifications
Table 12:
IDD Specifications and Conditions – 1GB
DDR SDRAM Components Only
Notes: 1–5, 8, 10, 12, 47; notes appear on pages 22–26; 0°C
≤ T
A ≤ +70°C; VDD = VDDQ = +2.5V ±0.2V
Max
Parameter/Condition
Sym
-335
-262
-26A/
-265
Units
Notes
OPERATING CURRENT: One device bank; Active-Precharge; tRC =
tRC (MIN); tCK = tCK (MIN); DQ, DM and DQS inputs changing once
per clock cyle; Address and control inputs changing once every
two clock cycles
IDD0a
1,215
1,080
mA
OPERATING CURRENT: One device bank; Active -Read Precharge;
Burst = 4; tRC = tRC (MIN); tCK = tCK (MIN); IOUT = 0mA; Address
and control inputs changing once per clock cycle
IDD1a
1,485
1,350
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks
idle; Power-down mode; tCK = tCK (MIN); CKE = (LOW)
IDD2Pb
90
mA
21, 28,
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle; tCK =
tCK MIN; CKE = HIGH; Address and other control inputs changing
once per clock cycle. VIN = VREF for DQ, DQS, and DM
IDD2Fb
810
720
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode; tCK = tCK (MIN); CKE = LOW
IDD3Pb
630
540
mA
21, 28,
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device
bank; Active-Precharge; tRC = tRAS (MAX); tCK = tCK (MIN); DQ,
DM andDQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle
IDD3Nb
900
810
mA
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One
bank active; Address and control inputs changing once per clock
cycle; tCK = tCK (MIN); IOUT = 0mA
IDD4Ra
1,530
1,350
mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
device bank active; Address and control inputs changing once per
clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing
twice per clock cycle
IDD4Wa
1,620
1,440
1,260
mA
AUTO REFRESH CURRENT
tREFC = tRFC (MIN)
IDD5b
5,220
5,040
mA
tREFC = 7.8125s
IDD5Ab
180
mA
SELF REFRESH CURRENT: CKE
≤ 0.2V
IDD6b
90
mA
OPERATING CURRENT: Four device bank interleaving READs (BL =
4) with auto precharge, tRC = tRC (MIN); tCK = tCK (MIN); Address
and control inputs change only during Active READ, or WRITE
commands
IDD7a
3,690
3,645
3,195
mA
Note:
a: Value calculated as one module rank in this operating condition, and all other module
ranks in IDD2p (CKE LOW) mode.
b: Value calculated reflects all module ranks in this operating condition.
相關(guān)PDF資料
PDF描述
MT2S3216D-20 32K X 16 MULTI DEVICE SRAM MODULE, 20 ns, DMA40
MT46H256M32LFCM-5:A 256M X 32 DDR DRAM, 5 ns, PBGA90
MT46H256M32L2JV-75IT:A 256M X 32 DDR DRAM, 6 ns, PBGA168
MT46H256M32L4CM-54IT:A 256M X 32 DDR DRAM, 5 ns, PBGA90
MT46H256M32L4MC-54AT:A 256M X 32 DDR DRAM, 5 ns, PBGA240
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT-19 功能描述:TERM BARRIER 19CIRC DUAL ROW RoHS:是 類別:連接器，互連式 >> 接線座 - 隔板塊 系列:M 標準包裝:10 系列:Beau™ 38780 端接塊類型:阻隔塊 電路數(shù):15 導(dǎo)線入口數(shù)目:30 間距:0.438"（11.12mm） 行數(shù):2 電流:15A 電壓:300V 線規(guī):14-22 AWG 頂部端子:螺釘 底部端子:焊片 阻擋層類型:雙壁（雙） 特點:法蘭 顏色:黑 包裝:散裝 安裝類型:通孔 工作溫度:- 材料 - 絕緣體:聚對苯二甲酸丁二酯（PBT），玻璃纖維增強型 材料可燃性額定值:UL94 V-0 其它名稱:038780-111538780-1115387801115
MT190A 制造商:Black Box Corporation 功能描述:SMART 64K CSU/DSU
MT190AD130 制造商:BLACK BOX 功能描述:64K CSU/DSU
MT190A-D48 制造商:Black Box Corporation 功能描述:Smart 64K CSU/DSUs, 24 48-VDC
MT190A-D48-W1 制造商:Black Box Corporation 功能描述:1 YEAR WARRANTY FOR MT190A-D48
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*