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參數(shù)資料
| 型號： | MT18VDVF6472DG-265XX |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁數(shù)： | 8/38頁 |
| 文件大?。?/td> | 713K |
| 代理商： | MT18VDVF6472DG-265XX |
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PDF: 09005aef81c73825/Source: 09005aef81c73837
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DVF18C64_128x72D_2.fm - Rev. A 8/05 EN
16
2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM
Commands
Table 7, Commands Truth Table, and Table 8, DM Operation Truth Table, provide a gen-
eral reference of available commands. For a more detailed description of commands and
operations, refer to the 256Mb or 512Mb DDR SDRAM component data sheets.
Notes: 1. DESELECT and NOP are functionally interchangeable.
2. BA0–BA1 provide device bank address and A0–A12 provide row address.
3. BA0–BA1 provide device bank address; A0–A9 (512MB) or A0–A9, A11 (1GB) provide col-
umn address; A10 HIGH enables the auto precharge feature (nonpersistent), and A10
LOW disables the auto precharge feature.
4. Applies only to read bursts with auto precharge disabled; this command is undefined (and
should not be used) for READ bursts with auto precharge enabled and for WRITE bursts.
5. A10 LOW: BA0–BA1 determine which device bank is precharged. A10 HIGH: all device
banks are precharged and BA0–BA1 are “Don’t Care.”
6. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care”
except for CKE.
8. BA0-BA1 select either the mode register or the extended mode register (BA0 = 0, BA1 = 0
select the mode register; BA0 = 1, BA1 = 0 select extended mode register; other combina-
tions of BA0–BA1 are reserved). A0–A12 provide the op-code to be written to the selected
mode register.
Table 7:
Commands Truth Table
CKE is HIGH for all commands shown except SELF REFRESH; all states and sequences not shown are illegal or
reserved
NAME (FUNCTION)
CS#
RAS#
CAS#
WE#
ADDR
NOTES
DESELECT (NOP)
HX
X
NO OPERATION (NOP)
LH
H
X
ACTIVE (Select bank and activate row)
L
H
Bank/Row
READ (Select bank and column, and start READ burst)
L
H
L
H
Bank/Col
WRITE (Select bank and column, and start WRITE burst)
L
H
L
Bank/Col
BURST TERMINATE
LH
H
L
X
PRECHARGE (Deactivate row in bank or banks)
L
H
L
Code
AUTO REFRESH or SELF REFRESH
(Enter self refresh mode)
LL
L
H
X
LOAD MODE REGISTER
LL
L
Op-Code
Table 8:
DM Operation Truth Table
Used to mask write data; provided coincident with the corresponding data
NAME (FUNCTION)
DM
DQs
WRITE Enable
LValid
WRITE Inhibit
HX
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