參數(shù)資料
型號(hào): MT46V128M4P-75ZLIT:C
元件分類: DRAM
英文描述: 128M X 4 DDR DRAM, 0.75 ns, PDSO66
封裝: 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
文件頁數(shù): 13/94頁
文件大?。?/td> 4179K
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
20
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Extended Mode Register
Figure 9:
Extended Mode Register Definition
Notes: 1. The reduced drive strength option is available on the x16 version. The reduced drive
strength option is not supported on the x4 and x8 versions; contact Micron for future sup-
port of this feature.
2. The QFC# option is not supported.
Operating Mode
Reserved
0
0
Valid
DLL
Enable
Disable
DLL
1
0
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Extended Mode
Register (Ex)
Address Bus
9
7
65
4
3
8
2
1
0
0
1
E0
0
1
Drive Strength
Normal
Reduced
E11
E22
E0
E1,
Operating Mode
A10
A11
A12
BA1 BA0
10
11
12
13
14
E3
E4
0
0
0
0
0
E6 E5
E7
E8
E9
0
0
E10
E11
0
E12
DS
0
0
1
0
1
Mode Register Definition
Base Mode Register
Extended Mode Register
Reserved
M14
0
0
1
M13
相關(guān)PDF資料
PDF描述
MT46V64M4TG-75E 64M X 4 DDR DRAM, 0.75 ns, PDSO66
MT46V64M4FG-75Z 64M X 4 DDR DRAM, 0.75 ns, PBGA60
MT47H128M8HQ-3AT 128M X 8 DDR DRAM, 0.4 ns, PBGA60
MT47H64M16HR-3IT 64M X 16 DDR DRAM, 0.4 ns, PBGA84
MT48H8M16LFB4-8IT:JTR 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT46V128M4T67A3WC1 制造商:Micron Technology Inc 功能描述:128MX4 DDR SDRAM DIE-COM COMMERCIAL 2.5V - Trays
MT46V128M4TG-5B/D 制造商:Samsung Semiconductor 功能描述: