參數(shù)資料
型號(hào)： MT55L256L32FT-12
元件分類(lèi)： SRAM
英文描述： 256K X 32 ZBT SRAM, 9 ns, PQFP100
封裝： PLASTIC, TQFP-100
文件頁(yè)數(shù)： 2/25頁(yè)
文件大?。?/td> 300K
代理商： MT55L256L32FT-12
10
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 – Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
FBGA PIN DESCRIPTIONS (continued)
x18
x32/x36
SYMBOL
TYPE
DESCRIPTION
8 A
ADV/LD#
Input Synchronous Address Advance/Load: When HIGH, this input is
used to advance the internal burst counter, controlling burst
access after the external address is loaded. When ADV/LD# is
HIGH, R/W# is ingored. A LOW on ADV/LD# clocks a new
address at the CLK rising edge.
1R
MODE
Input
Mode: This input selects the burst sequence. A LOW on this
(LB0#)
input selects “ linear burst.” NC or HIGH on this input selects
“ interleaved burst.” Do not alter input state while device is
operating.
(a) 10J, 10K,
DQa
Input/ SRAM Data I/Os: For the x18 version, Byte “ a” is associated DQas;
10L, 10M, 11D, 10L, 10M, 11J,
Output Byte “ b” is associated with DQbs. For the x32 and x36 versions,
11E, 11F, 11G 11K, 11L, 11M
Byte “ a” is associated with DQas; Byte “ b” is associated with DQbs;
(b) 1J, 1K,
(b) 10D, 10E,
DQb
Byte “ c” is associated with DQcs; Byte “ d” is associated with DQds.
1L, 1M, 2D,
10F, 10G, 11D,
Input data must meet setup and hold times around the rising edge
2E, 2F, 2G
11E, 11F, 11G
of CLK.
(c) 1D, 1E,
DQc
1F, 1G, 2D,
2E, 2F, 2G
(d) 1J, 1K, 1L,
DQd
1M, 2J, 2K,
2L, 2M
11C
11N
NF/DQPa
NF /
No Function/Parity Data I/Os: On the x32 version, these are No
1N
11C
NF/DQPb
I/O
Function (NF). On the x18 version, Byte “ a” parity is DQPa; Byte
–
1C
NF/DQPc
“ b” parity is DQPb. On the x36 version, Byte “ a” parity is DQPa;
–
1N
NF/DQPd
Byte “ b” parity is DQPb; Byte “ c” parity is DQPc; Byte “ d” parity is
DQPd.
2H, 4D, 4E, 4F, 2H, 4D, 4E, 4F,
VDD
Supply Power Supply: See DC Electrical Characteristics and Operating
4G, 4H, 4J,
Conditions for range.
4K, 4L, 4M,
8D, 8E, 8F,
8G, 8H, 8J,
8K, 8L, 8M
3C, 3D, 3E,
VDDQ
Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and
3F, 3G, 3J,
Operating Conditions for range.
3K, 3L, 3M,
3N, 9C, 9D,
9E, 9F, 9G,
9J, 9K, 9L,
9M, 9N
(continued on next page)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT55L256L32FT-12IT 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT55L256L32P 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:8Mb ZBT SRAM
MT55L256L32PF-10 制造商:Micron Technology Inc 功能描述:
MT55L256L32PT10 制造商:MICRON 功能描述:*
MT55L256L32PT-10 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Quad 3.3V 8M-Bit 256K x 32 5ns 100-Pin TQFP 制造商:Micron Technology Inc 功能描述:
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