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參數(shù)資料
| 型號： | MT55L256L32FT-12 |
| 元件分類： | SRAM |
| 英文描述： | 256K X 32 ZBT SRAM, 9 ns, PQFP100 |
| 封裝： | PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 7/25頁 |
| 文件大?。?/td> | 300K |
| 代理商： | MT55L256L32FT-12 |
15
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18F_C.p65 – Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD Supply
Relative to VSS .................................. -0.5V to +4.6V
Voltage on VDDQ Supply
Relative to VSS ..................................... -0.5V to VDD
VIN ............................................... -0.5V to VDDQ + 0.5V
Storage Temperature (TQFP) ............ -55°C to +150°C
Storage Temperature (FBGA) ........... -55°C to +125°C
Junction Temperature** ................................... +150°C
Short Circuit Output Current .......................... 100mA
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Junction temperature depends upon package type,
cycle time, loading, ambient temperature, and airflow.
See Micron Technical Note TN-05-14 for more
information.
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0° C
≤ T
A ≤ +70° C; VDD, VDDQ = +3.3V ±0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
VIH
2.0
VDD + 0.3
V
1, 2
Input High (Logic 1) Voltage
DQ pins
VIH
2.0
VDD + 0.3
V
1, 2
Input Low (Logic 0) Voltage
VIL
-0.3
0.8
V
1, 2
Input Leakage Current
0V
≤ VIN ≤ VDD
ILI
-1.0
1.0
A
3
Output Leakage Current
Output(s) disabled,
ILO
-1.0
1.0
A
0V
≤ VIN ≤ VDD
Output High Voltage
IOH = -4.0mA
VOH
2.4
V
1, 4
Output Low Voltage
IOL = 8.0mA
VOL
0.4
V
1, 4
Supply Voltage
VDD
3.135
3.465
V
1
Isolated Output Buffer Supply
VDDQ
3.135
VDD
V
1, 5
NOTE: 1. All voltages referenced to VSS (GND).
2. Overshoot:
VIH
≤ +4.6V for t ≤ tKHKH/2 for I ≤ 20mA
Undershoot:
VIL
≥ -0.7V for t ≤ tKHKH/2 for I ≤ 20mA
Power-up:
VIH
≤ +3.465V and VDD ≤ +3.135V for t ≤ 200ms
3. MODE pin has an internal pull-up, and input leakage = ±10A.
4. The load used for VOH, VOL testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O
curves are available upon request.
5. VDDQ should never exceed VDD. VDD and VDDQ can be externally wired together to the same power supply.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT55L256L32FT-12IT | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT55L256L32P | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb ZBT SRAM |
| MT55L256L32PF-10 | 制造商:Micron Technology Inc 功能描述: |
| MT55L256L32PT10 | 制造商:MICRON 功能描述:* |
| MT55L256L32PT-10 | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Quad 3.3V 8M-Bit 256K x 32 5ns 100-Pin TQFP 制造商:Micron Technology Inc 功能描述: |
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