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參數(shù)資料
| 型號： | PH5330 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 50 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 239K |
| 代理商： | PH5330 |
Philips Semiconductors
PH5330
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 18 July 2003
2 of 12
9397 750 10951
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
T
j
= 25
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
Typ
-
-
-
-
4.6
8.0
Max
30
50
39
150
5.3
10
Unit
V
A
W
°
C
m
m
V
GS
= 10 V; I
D
= 20 A; T
j
= 25
°
C
V
GS
= 4.5 V; I
D
= 20 A; T
j
= 25
°
C
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
I
DM
peak drain current
P
tot
total power dissipation
T
stg
storage temperature
T
j
operating junction temperature
Source-drain diode
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Limiting values
Conditions
T
j
= 25 to 150
°
C
Min
-
-
-
-
-
55
55
Max
30
±
20
50
160
39
+150
+150
Unit
V
V
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
-
50
A
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