參數(shù)資料
型號: PH5330
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 50 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, LFPAK-5
文件頁數(shù): 3/12頁
文件大小: 239K
代理商: PH5330
Philips Semiconductors
PH5330
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 18 July 2003
3 of 12
9397 750 10951
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
V
GS
10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03ah31
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Pder
(%)
03ag87
0
40
80
120
0
50
100
150
200
T
mb
(oC)
I
der
(%)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03ag88
1
10
10
2
10
3
10
-1
1
10
10
2
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 μs
100 μs
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