參數(shù)資料
型號(hào): PH5330
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 50 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, LFPAK-5
文件頁(yè)數(shù): 7/12頁(yè)
文件大小: 239K
代理商: PH5330
Philips Semiconductors
PH5330
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 18 July 2003
7 of 12
9397 750 10951
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 11. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03ah33
0
1
2
3
-80
-20
40
100
160
(V)
min
typ
max
VGS(th)
Tj (
°
C)
03ah30
10-6
10-5
10-4
10-3
10-2
10-1
ID
(A)
0
1
2
3
max.
typ.
min.
VGS (V)
03ag91
0
20
40
60
80
0
20
40
60
80
I
D
(A)
g
fs
(S)
T
j
= 25 oC
150 oC
V
DS
> I
D
x R
DSon
03ag93
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
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