參數(shù)資料
型號: PH5330
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 50 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, LFPAK-5
文件頁數(shù): 8/12頁
文件大?。?/td> 239K
代理商: PH5330
Philips Semiconductors
PH5330
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 18 July 2003
8 of 12
9397 750 10951
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
T
j
= 25
°
C; I
D
= 40 A; V
DD
= 10 V
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ag92
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
V
SD
(V)
I
S
(A)
T
j
= 25 oC
150 oC
V
GS
= 0 V
03ag94
0
2
4
6
8
10
0
10
20
30
40
Q
G
(nC)
V
GS
(V)
V
DD
= 10 V
I
D
= 40 A
T
j
= 25 oC
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