- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367939 > PHD55N04LT Triple 1.8V to 6V High-Side MOSFET Drivers; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C PDF資料下載
參數(shù)資料
| 型號： | PHD55N04LT |
| 英文描述： | Triple 1.8V to 6V High-Side MOSFET Drivers; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| 中文描述： | 晶體管| MOSFET的| N溝道| 35V的五（巴西）直| 55A條（?。﹟對252AA |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 117K |
| 代理商： | PHD55N04LT |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP55N04LT, PHB55N04LT
PHD55N04LT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
55
A
-
-
220
A
I
F
= 25 A; V
GS
= 0 V
I
F
= 55 A; V
GS
= 0 V
I
F
= 20 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 25 V
-
-
-
-
0.9
1.0
87
0.1
1.2
-
-
-
V
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
ns
μ
C
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); V
GS
≥
5 V
Fig.3. Safe operating area
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
1
10
100
1000
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
RDS(on) = VDS/ ID
tp = 10 us
100 us
1 ms
100 ms
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
January 2001
3
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHP55N04LT | TRANSISTOR | MOSFET | N-CHANNEL | 35V V(BR)DSS | 55A I(D) | TO-220AB |
| PHB55N04LT | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| PHB55N03 | TrenchMOS transistor Standard level FET |
| PHB55N03T | TrenchMOS transistor Standard level FET |
| PHD6N10E | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHD5N20E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHD63NQ03LT | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V D-PAK |
| PHD63NQ03LT,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHD63NQ03LT | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V D-PAK |
| PHD63NQ03LT/T3 | 功能描述:兩極晶體管 - BJT TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。