參數(shù)資料
型號： PHD55N04LT
英文描述： Triple 1.8V to 6V High-Side MOSFET Drivers; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C
中文描述： 晶體管| MOSFET的| N溝道| 35V的五（巴西）直| 55A條（?。﹟對252AA
文件頁數(shù)： 6/11頁
文件大小： 117K
代理商： PHD55N04LT
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP55N04LT, PHB55N04LT
PHD55N04LT
MECHANICAL DATA
Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
TO-220
D
D1
q
P
L
1
2
3
L2
(1)
b1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L1
UNIT
A1
b1
D1
e
P
mm
2.54
q
Q
A
b
D
c
L2
(1)
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
E
L
97-06-11
January 2001
6
Rev 1.000
相關PDF資料
PDF描述
PHP55N04LT TRANSISTOR | MOSFET | N-CHANNEL | 35V V(BR)DSS | 55A I(D) | TO-220AB
PHB55N04LT RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
PHB55N03 TrenchMOS transistor Standard level FET
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