參數(shù)資料
型號： PSD813F3V
英文描述： 60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package; Similar to IRHLUB7970Z4 with optional Total Dose Rating of 300kRads
中文描述： Flash在系統(tǒng)編程（ISP）外設(shè)的8位微控制器
文件頁數(shù)： 24/103頁
文件大?。?/td> 1185K
代理商： PSD813F3V
PSD81XFX, PSD83XF2, PSD85XF2
24/103
Erasing Flash Memory
Flash Bulk Erase.
The Flash Bulk Erase instruc-
tion uses six WRITE operations followed by a
READ operation of the status register, as de-
scribed in Table 8. If any byte of the Bulk Erase in-
struction is wrong, the Bulk Erase instruction
aborts and the device is reset to the Read Flash
memory status.
During a Bulk Erase, the memory status may be
checked by reading the Error Flag (DQ5) bit, the
Toggle Flag (DQ6) bit, and the Data Polling Flag
(DQ7) bit, as detailed in the section entitled “Pro-
gramming Flash Memory”, on page 22. The Error
Flag (DQ5) bit returns a 1 if there has been an
Erase Failure (maximum number of Erase cycles
have been executed).
It is not necessary to program the memory with
00h because the PSD8XXFX automatically does
this before erasing to 0FFh.
During execution of the Bulk Erase instruction, the
Flash memory does not accept any instructions.
Flash Sector Erase.
The Sector Erase instruc-
tion uses six WRITE operations, as described in
Table 8. Additional Flash Sector Erase codes and
Flash memory sector addresses can be written
subsequently to erase other Flash memory sec-
tors in parallel, without further coded cycles, if the
additional bytes are transmitted in a shorter time
than the time-out period of about 100μs. The input
of a new Sector Erase code restarts the time-out
period.
The status of the internal timer can be monitored
through the level of the Erase Time-out Flag (DQ3)
bit. If the Erase Time-out Flag (DQ3) bit is 0, the
Sector Erase instruction has been received and
the time-out period is counting. If the Erase Time-
out Flag (DQ3) bit is 1, the time-out period has ex-
pired and the PSD8XXFX is busy erasing the
Flash memory sector(s). Before and during Erase
time-out, any instruction other than Suspend Sec-
tor Erase and Resume Sector Erase instructions
abort the cycle that is currently in progress, and re-
set the device to READ Mode. It is not necessary
to program the Flash memory sector with 00h as
the PSD8XXFX does this automatically before
erasing (byte = FFh).
During a Sector Erase, the memory status may be
checked by reading the Error Flag (DQ5) bit, the
Toggle Flag (DQ6) bit, and the Data Polling Flag
(DQ7) bit, as detailed in the section entitled “Pro-
gramming Flash Memory”, on page 22.
During execution of the Erase cycle, the Flash
memory accepts only Reset and Suspend Sector
Erase instructions. Erasure of one Flash memory
sector may be suspended, in order to read data
from another Flash memory sector, and then re-
sumed.
Suspend Sector Erase.
When a Sector Erase
cycle is in progress, the Suspend Sector Erase in-
struction can be used to suspend the cycle by writ-
ing 0B0h to any address when an appropriate
Sector Select (FS0-FS7 or CSBOOT0-CSBOOT3)
is High. (See Table 8). This allows reading of data
from another Flash memory sector after the Erase
cycle has been suspended. Suspend Sector
Erase is accepted only during an Erase cycle and
defaults to READ Mode. A Suspend Sector Erase
instruction executed during an Erase time-out pe-
riod, in addition to suspending the Erase cycle, ter-
minates the time out period.
The Toggle Flag (DQ6) bit stops toggling when the
PSD8XXFX internal logic is suspended. The sta-
tus of this bit must be monitored at an address
within the Flash memory sector being erased. The
Toggle Flag (DQ6) bit stops toggling between
0.1 μs and 15 μs after the Suspend Sector Erase
instruction has been executed. The PSD8XXFX is
then automatically set to READ Mode.
If an Suspend Sector Erase instruction was exe-
cuted, the following rules apply:
– Attempting to read from a Flash memory sector
that was being erased outputs invalid data.
– Reading from a Flash sector that was not
being
erased is valid.
– The Flash memory cannot
be programmed, and
only responds to Resume Sector Erase and
Reset Flash instructions (READ is an operation
and is allowed).
– If a Reset Flash instruction is received, data in
the Flash memory sector that was being erased
is invalid.
Resume Sector Erase.
If a Suspend Sector
Erase instruction was previously executed, the
erase cycle may be resumed with this instruction.
The Resume Sector Erase instruction consists of
writing 030h to any address while an appropriate
Sector Select (FS0-FS7 or CSBOOT0-CSBOOT3)
is High. (See Table 8.)
相關(guān)PDF資料
PDF描述
PSD813F4V -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA597260 with Standard Packaging
PSD813F5V -60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA9064 with optional Total Dose Rating of 300kRads
PSD86 THREE PHASE RECTIFIER BRIDGE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSD813F3V-12 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable (ISP) Peripherals for 8-bit MCUs, 5V
PSD813F3V-12J 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD813F3V-12JI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD813F3V-12JIT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD813F3V-12JT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
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