參數(shù)資料
型號: PSD813F3V
英文描述: 60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package; Similar to IRHLUB7970Z4 with optional Total Dose Rating of 300kRads
中文描述: Flash在系統(tǒng)編程(ISP)外設(shè)的8位微控制器
文件頁數(shù): 70/103頁
文件大?。?/td> 1185K
代理商: PSD813F3V
PSD81XFX, PSD83XF2, PSD85XF2
70/103
Table 37. Example of PSD8XXFX Typical Power Calculation at V
CC
= 5.0 V (Turbo Mode Off)
Conditions
Highest Composite PLD input frequency
(Freq PLD)
= 8 MHz
MCU ALE frequency (Freq ALE)
= 4 MHz
% Flash memory
Access
= 80%
% SRAM access
= 15%
% I/O access
= 5% (no additional power above base)
Operational Modes
% Normal
= 10%
% Power-down Mode
= 90%
Number of product terms used
(from fitter report)
= 45 PT
% of total product terms
= 45/182 = 24.7%
Turbo Mode
= Off
Calculation (using typical values)
I
CC
total
= Ipwrdown x %pwrdown + %normal x (I
CC
(ac) + I
CC
(dc))
= Ipwrdown x %pwrdown + % normal x (%flash x 2.5 mA/MHz x Freq ALE
+ %SRAM x 1.5 mA/MHz x Freq ALE
+ % PLD x (from graph using Freq PLD))
= 50 μA x 0.90 + 0.1 x (0.8 x 2.5 mA/MHz x 4 MHz
+ 0.15 x 1.5 mA/MHz x 4 MHz
+ 24 mA)
= 45 μA + 0.1 x (8 + 0.9 + 24)
= 45 μA + 0.1 x 32.9
= 45 μA + 3.29 mA
= 3.34 mA
This is the operating power with no EEPROM WRITE or Flash memory Erase cycles in progress. Calculation is based
on I
OUT
= 0 mA.
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