參數資料
型號: PSD813F3V
英文描述: 60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package; Similar to IRHLUB7970Z4 with optional Total Dose Rating of 300kRads
中文描述: Flash在系統編程(ISP)外設的8位微控制器
文件頁數: 74/103頁
文件大?。?/td> 1185K
代理商: PSD813F3V
PSD81XFX, PSD83XF2, PSD85XF2
74/103
Table 44. DC Characteristics (5V devices)
Note: 1. Reset (RESET) has hysteresis. V
IL1
is valid at or below 0.2V
CC
–0.1. V
IH1
is valid at or above 0.8V
CC
.
2. CSI deselected or internal Power-down mode is active.
3. PLD is in non-Turbo mode, and none of the inputs are switching.
4. Please see Figure 32 for the PLD current calculation.
5. I
OUT
= 0 mA
Symbol
Parameter
Test Condition
(in addition to those in
Table 39)
Min.
Typ.
Max.
Unit
V
IH
Input High Voltage
4.5 V < V
CC
< 5.5 V
2
V
CC
+0.5
V
V
IL
Input Low Voltage
4.5 V < V
CC
< 5.5 V
–0.5
0.8
V
V
IH1
Reset High Level Input Voltage
(Note
1
)
0.8V
CC
V
CC
+0.5
V
V
IL1
Reset Low Level Input Voltage
(Note
1
)
–0.5
0.2V
CC
–0.1
V
V
HYS
Reset Pin Hysteresis
0.3
V
V
LKO
V
CC
(min) for Flash Erase and
Program
2.5
4.2
V
V
OL
Output Low Voltage
I
OL
= 20 μA, V
CC
= 4.5 V
0.01
0.1
V
I
OL
= 8 mA, V
CC
= 4.5 V
0.25
0.45
V
V
OH
Output High Voltage Except
V
STBY
On
I
OH
= –20 μA, V
CC
= 4.5 V
4.4
4.49
V
I
OH
= –2 mA, V
CC
= 4.5 V
2.4
3.9
V
V
OH1
Output High Voltage V
STBY
On
I
OH1
= 1 μA
V
STBY
– 0.8
V
V
STBY
SRAM Stand-by Voltage
2.0
V
CC
V
I
STBY
SRAM Stand-by Current
V
CC
= 0 V
0.5
1
μA
I
IDLE
Idle Current (V
STBY
input)
V
CC
> V
STBY
–0.1
0.1
μA
V
DF
SRAM Data Retention Voltage
Only on V
STBY
2
V
I
SB
Stand-by Supply Current
for Power-down Mode
CSI >V
CC
–0.3 V (Notes
2,3
)
50
200
μA
I
LI
Input Leakage Current
V
SS
< V
IN
< V
CC
–1
±0.1
1
μA
I
LO
Output Leakage Current
0.45 < V
OUT
< V
CC
–10
±5
10
μA
I
CC
(DC)
(Note
5
)
Operating
Supply
Current
PLD Only
PLD_TURBO = Off,
f = 0 MHz (Note
5
)
0
μA/PT
PLD_TURBO = On,
f = 0 MHz
400
700
μA/PT
Flash memory
During Flash memory
WRITE/Erase Only
15
30
mA
Read only, f = 0 MHz
0
0
mA
SRAM
f = 0 MHz
0
0
mA
I
CC
(AC)
(Note
5
)
PLD AC Adder
note
4
Flash memory AC Adder
2.5
3.5
mA/
MHz
SRAM AC Adder
1.5
3.0
mA/
MHz
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