參數(shù)資料
型號: RC28F128P33T85
廠商: NUMONYX
元件分類: PROM
英文描述: 8M X 16 FLASH 3V PROM, 85 ns, PBGA64
封裝: BGA-64
文件頁數(shù): 40/96頁
文件大小: 1378K
代理商: RC28F128P33T85
November 2007
Datasheet
Order Number: 314749-05
45
Numonyx StrataFlash Embedded Memory (P33)
Table 23: Command Bus Cycles
Mode
Command
Bus
Cycles
First Bus Cycle
Second Bus Cycle
Oper
Addr(1)
Data(2)
Oper
Addr(1)
Data(2)
Read
Read Array
1
Write
DnA
0xFF
-
Read Device Identifier
≥ 2
Write
DnA
0x90
Read
DBA + IA
ID
CFI Query
≥ 2
Write
DnA
0x98
Read
DBA + QA
QD
Read Status Register
2
Write
DnA
0x70
Read
DnA
SRD
Clear Status Register
1
Write
DnA
0x50
-
Program
Word Program
2
Write
WA
0x40/
0x10
Write
WA
WD
Buffered Program(3)
> 2Write
WA
0xE8
Write
WA
N - 1
Buffered Enhanced Factory
Program (BEFP)(4)
> 2
Write
WA
0x80
Write
WA
0xD0
Erase
Block Erase
2
Write
BA
0x20
Write
BA
0xD0
Suspend
Program/Erase Suspend
1
Write
DnA
0xB0
-
Program/Erase Resume
1
Write
DnA
0xD0
-
Block
Locking/
Unlocking
Lock Block
2
Write
BA
0x60
Write
BA
0x01
Unlock Block
2
Write
BA
0x60
Write
BA
0xD0
Lock-down Block
2
Write
BA
0x60
Write
BA
0x2F
Protection
Program Protection Register
2
Write
PRA
0xC0
Write
PRA
PD
Program Lock Register
2
Write
LRA
0xC0
Write
LRA
LRD
Configuration Program Read Configuration
Register
2
Write
RCD
0x60
Write
RCD
0x03
Notes:
1.
First command cycle address should be the same as the operation’s target address.
DBA = Device Base Address (NOTE: needed for dual-die 512Mbit device)
DnA = Address within the device.
IA = Identification code address offset.
QA = CFI Query address offset.
WA = Word address of memory location to be written.
BA = Address within the block.
PRA = Protection Register address.
LRA = Lock Register address.
RCD = Read Configuration Register data on QUAD+ A[15:0] or EASY BGA / TSOP A[16:1].
2.
ID = Identifier data.
QD = Query data on DQ[15:0].
SRD = Status Register data.
WD = Word data.
N = Word count of data to be loaded into the write buffer.
PD = Protection Register data.
LRD = Lock Register data.
3.
The second cycle of the Buffered Program Command is the word count of the data to be loaded into the write buffer. This
is followed by up to 32 words of data.Then the confirm command (0xD0) is issued, triggering the array programming
operation.
4.
The confirm command (0xD0) is followed by the buffer data.
相關(guān)PDF資料
PDF描述
RC28F256P33T85A 16M X 16 FLASH 3V PROM, 85 ns, PBGA64
RC28F160C3TC90 1M X 16 FLASH 3V PROM, 90 ns, PBGA64
RC28F160C3BD70 1M X 16 FLASH 3V PROM, 70 ns, PBGA64
RC4194K DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, MBFM9
RM4194K DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, MBFM9
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RC28F128P33T85A 功能描述:IC FLASH 128MBIT 85NS 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(單線) 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP,8-MSOP(0.118",3.00mm 寬) 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
RC28F128P33TF60 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx?? P33-65nm Flash Memory
RC28F128P33TF60A 功能描述:IC FLASH 128MBIT 85NS 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M(256K x 18) 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x20) 包裝:托盤
RC28F128P3GB850 制造商:Micron Technology Inc 功能描述:128MB, KEARNY EBGA 3.0 - Trays
RC28F128P3GT850 制造商:Micron Technology Inc 功能描述:128MB, KEARNY EBGA 3.0 - Trays