參數(shù)資料
型號： RIVA128
廠商： 意法半導體
英文描述： RIVA 128⑩ 128-BIT 3D MULTIMEDIA ACCELERATOR
中文描述： 麗娃128⑩128位3D多媒體加速器
文件頁數(shù)： 64/85頁
文件大?。?/td> 609K
代理商： RIVA128
128-BIT 3D MULTIMEDIA ACCELERATOR
RIVA128ZX
64/85
13
13.1 ABSOLUTE MAXIMUM RATINGS
1
ELECTRICAL SPECIFICATIONS
NOTES
1
Stresses greater than those listed under ‘Absolute maximum ratings’ may cause permanent damage to the device. This
is a stress rating only andfunctional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended pe-
riods may affect reliability.
For 3V tolerant pins VDD = 3.3V
±
0.3V, for 5V tolerant pins (PCI, Video Port and Serial interfaces) VDD = 5V
±
0.5V
2
13.2 OPERATING CONDITIONS
13.3 DC SPECIFICATIONS
Table 22.
DC characteristics
NOTES
1
2
Includes high impedance output leakage for all bi-directional buffers with tri-state outputs
VDD = max, GND
≤
VIN
≤
VDD
Table 23.
Parameters applying to PCI and AGP interface pins
Symbol
Parameter
Min.
Max.
Units
Notes
VDD/AVDD
DC supply voltage
3.6
V
Voltage on input and output pins
GND-1.0
VDD+0.5
V
2
TS
Storage temperature (ambient)
-55
125
°
C
TA
Temperature under bias
0
85
°
C
Analog output current (per output)
45
mA
DC digital output current (per output)
25
mA
Symbol
Parameter
Min.
Typ.
Max.
Units
Notes
TC
Case temperature
120
°
C
Symbol
VDD
IIN
Parameter
Positive supply voltage
Input current (signal pins)
Min.
3.135
Typ.
3.3
Max.
3.465
±
10
Units
V
μ
A
Notes
1, 2
Power dissipation
3.7
W
Symbol
CIN
Parameter
Input capacitance
Min.
5
Typ.
Max.
10
Units
pF
Notes
1
COUT
Output load capacitance
5
50
pF
1
Parameters for 5V signaling environment only:
VIH
Input logic 1 voltage
2.0
5.75
V
VIL
Input logic 0 voltage
-0.5
0.8
V
VOH
Output logic 1 level
2.4
V
VOL
Output logic 0 level
0.55
V
IOH
Output load current, logic 1 level
-2
mA
IOL
Output load current, logic 0 level
3 or 6
mA
2
Parameters for 3.3V and AGP signaling environments only:
VIH
Input logic 1 voltage
0.475VDD
VDD+0.5
V
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