參數(shù)資料
型號(hào): SPI20N60C3
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS™ Power Transistor
文件頁(yè)數(shù): 4/14頁(yè)
文件大?。?/td> 314K
代理商: SPI20N60C3
2003-10-08
Page 4
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
-
typ.
-
max.
20.7
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
I
S
T
C
=25°C
A
I
SM
-
-
62.1
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
di
rr
/dt
V
GS
=0V,
I
F
=
I
S
-
1
1.2
V
V
R
=480V,
I
F
=
I
S
,
d
i
F
/d
t
=100A/μs
-
500
800
ns
-
11
-
μC
-
70
-
A
Peak rate of fall of reverse
recovery current
T
j
=25°C
-
1400
-
A/μs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPA
SPA
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
0.00769
0.00769
K/W
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
0.0003763
0.0003763
Ws/K
0.015
0.015
0.001411
0.001411
0.029
0.029
0.001931
0.001931
0.114
0.163
0.005297
0.005297
0.136
0.323
0.012
0.008453
0.059
2.526
0.091
0.412
SPP_B_I
SPP_B_I
External Heatsink
T
j
T
case
T
amb
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
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