參數(shù)資料
型號(hào)： SPI20N60C3
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS™ Power Transistor
文件頁數(shù)： 2/14頁
文件大?。?/td> 314K
代理商： SPI20N60C3
2003-10-08
Page 2
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V,
I
D
= 20.7 A,
T
j
= 125 °C
d
v
/d
t
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
-
typ.
-
max.
0.6
Thermal resistance, junction - case
R
thJC
R
thJC_FP
R
thJA
R
thJA_FP
R
thJA
K/W
Thermal resistance, junction - case, FullPAK
-
-
3.6
Thermal resistance, junction - ambient, leaded
-
-
62
Thermal resistance, junction - ambient, FullPAK
-
-
80
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
4)
T
sold
-
-
260
°C
Electrical Characteristics,
at
T
j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
-
max.
-
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
V
(BR)DS
600
-
V
Drain-Source avalanche
breakdown voltage
V
GS
=0V,
I
D
=20A
700
-
Gate threshold voltage
V
GS(th)
I
DSS
I
D
=1000
μ
A,
V
GS=VDS
2.1
3
3.9
Zero gate voltage drain current
V
DS
=600V,
V
GS
=0V,
T
j
=25°C
T
j
=150°C
-
-
0.1
-
1
100
μA
Gate-source leakage current
I
GSS
R
DS(on)
V
GS
=30V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance
V
GS
=10V,
I
D
=13.1A
T
j
=25°C
T
j
=150°C
-
-
0.16
0.43
0.19
-
Gate input resistance
R
G
f
=1MHz, open drain
-
0.54
-
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SPI20N60C3E3046 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-262 T/R
SPI20N60C3HKSA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-262 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 20.7A TO-262
SPI20N60C3XKSA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-262 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube
SPI20N60CFD 功能描述:MOSFET COOL MOS PWR TRANS 650V 0.22 Ohms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SPI20N60CFDHKSA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-262 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 20.7A TO-262
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