參數(shù)資料
型號： SPI20N60C3
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS™ Power Transistor
文件頁數(shù)： 3/14頁
文件大?。?/td> 314K
代理商： SPI20N60C3
2003-10-08
Page 3
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
-
typ.
17.5
max.
-
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=13.1A
S
Input capacitance
Output capacitance
Reverse transfer capacitance
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
2400
-
pF
-
780
-
-
50
-
Effective output capacitance,
5)
energy related
V
GS
=0V,
V
DS
=0V to 480V
-
83
-
Effective output capacitance,
6)
time related
Turn-on delay time
C
o(tr)
-
160
-
t
d(on)
V
DD
=380V,
V
GS
=0/13V,
I
D
=20.7A,
R
G
=3.6
,
T
j
=125
-
10
-
ns
Rise time
Turn-off delay time
Fall time
t
r
t
d(off)
t
f
V
DD
=380V,
V
GS
=0/13V,
I
D
=20.7A,
R
G
=3.6
-
5
-
-
67
100
-
4.5
12
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
gs
Q
gd
Q
g
V
DD
=480V,
I
D
=20.7A
-
11
-
nC
-
33
-
Gate charge total
V
DD
=480V,
I
D
=20.7A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=480V,
I
D
=20.7A
-
87
114
Gate plateau voltage
-
5.5
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f
.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
6
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
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參數(shù)描述
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