參數(shù)資料
型號(hào)： TMS28F002AXY
廠商： Texas Instruments, Inc.
英文描述： 262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
中文描述： 262144按8-BIT/131072由16位自動(dòng)選擇啟動(dòng)塊閃存
文件頁(yè)數(shù)： 22/79頁(yè)
文件大?。?/td> 1064K
代理商： TMS28F002AXY
TMS28F002Axy, TMS28F200Axy
262144 BY 8-BIT/131072 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997
22
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
TMS28F002ASy and TMS28F200ASy
The TMS28F002ASy and the TMS28F200ASy configurations have the auto-select feature that allows
alternative read and program/erase voltages. Memory reads can be performed using V
CC
= 3.3 V for optimum
power consumption or at V
CC
= 5 V, for device performance. Erasing or programming the device can be
accomplished with 5-V V
PP
, which eliminates having to use a 12-V source and/or in-system voltage converters.
Alternatively, 12-V V
PP
operation exists for systems that already have a 12-V power supply, which provides
faster programming and erasing times. These configurations are offered in two different temperature ranges:
0
°
C to 70
°
C and – 40
°
C to 85
°
C.
recommended operating conditions for TMS28F002ASy and TMS28F200ASy
MIN
NOM
3.3
MAX
3.6
UNIT
VCC
Supply voltage
During write/read/erase/erase suspend
3.3-V VCC range
5-V VCC range
VPPL
5-V VPP range
12-V VPP range
TTL
3
V
4.5
5
5.5
During read only (VPPL)
0
6.5
VPP
Supply voltage
During write/erase/erase suspend
4.5
5
5.5
V
11.4
12
12.6
3 3 V VCCrange
3.3-V VCC range
2
VCC + 0.5
VCC + 0.2
VCC + 0.3
VCC + 0.2
0.8
VIH
High-level dc
input voltage
CMOS
VCC – 0.2
V
5 V VCCrange
5-V VCC range
TTL
2
CMOS
VCC – 0.2
– 0.5
3 3 V VCCrange
3.3-V VCC range
TTL
VIL
Low-level dc input
voltage
CMOS
VSS – 0.2
– 0.3
VSS + 0.2
0.8
V
5 V VCCrange
5-V VCC range
TTL
CMOS
VSS – 0.2
VSS + 0.2
VLKO
VHH
VPPLK
VCC lock-out voltage from write/erase (see Note 7)
RP unlock voltage
2
V
11.4
12
13
V
VPP lock-out voltage from write/erase
0
1.5
V
TA
Operating free air temperature during read/erase/program
Operating free-air temperature during read/erase/program
L suffix
E suffix
0
70
85
°
C
°
C
– 40
NOTE 7: Minimum value at TA = 25
°
C.
word/byte typical write and block-erase performance for TMS28F002ASy and TMS28F200ASy
(see Notes 8 and 9)
5-V VPP RANGE
12-V VPP RANGE
3.3-V VCC
RANGE
PARAMETER
3.3-V VCC
RANGE
5-V VCC
RANGE
5-V VCC
RANGE
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
Main block erase time
2.4
1.9
1.3
1.1
14
Main block byte-program time
1.7
1.4
1.6
1.2
4.2
Main block word-program time
1.1
0.9
0.8
0.6
2.1
Parameter/boot-block erase time
8. Typical values shown are at TA = 25
°
C and nominal conditions
9. Excludes system-level overhead (all times in seconds)
0.84
0.8
0.44
0.34
7
NOTES:
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