參數(shù)資料
型號： TMS28F002AXY
廠商： Texas Instruments, Inc.
英文描述： 262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
中文描述： 262144按8-BIT/131072由16位自動選擇啟動塊閃存
文件頁數(shù)： 32/79頁
文件大小： 1064K
代理商： TMS28F002AXY
TMS28F002Axy, TMS28F200Axy
262144 BY 8-BIT/131072 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997
32
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
TMS28F002AEy and TMS28F200AEy
The TMS28F002AEy and the TMS28F200AEy configurations offer the auto-select feature of the
TMS28F200ASy with an extended V
CC
to a low 2.7-V to 3.6-V range (3-V nominal). Memory reads can be
performed using a V
CC
= 3 V, allowing for more efficient power consumption than the AS device.
recommended operating conditions for TMS28F002AEy and TMS28F200AEy
MIN
2.7
NOM
MAX
3.6
UNIT
VCC
Supply voltage
During write/read/erase/erase suspend
During write/read/erase/erase-suspend
3-V VCC range
5-V VCC range
VPPL
5-V VPP range
12-V VPP range
TTL
3
V
4.5
5
5.5
During read only (VPPL)
0
6.5
VPP
Supply voltage
During write/erase/erase suspend
During write/erase/erase-suspend
4.5
5
5.5
V
11.4
12
12.6
3 V VCCrange
3-V VCC range
2
VCC + 0.5
VCC + 0.2
VCC + 0.3
VCC + 0.2
0.8
VIH
High-level dc input
voltage
CMOS
VCC – 0.2
V
5 V VCCrange
5-V VCC range
TTL
2
CMOS
VCC – 0.2
– 0.5
3 V VCCrange
3-V VCC range
TTL
VIL
Low-level dc input
voltage
CMOS
VSS – 0.2
– 0.3
VSS + 0.2
0.8
V
5 V VCCrange
5-V VCC range
TTL
CMOS
VSS – 0.2
VSS + 0.2
VLKO
VHH
VPPLK
VCC lock-out voltage from write/erase (see Note 7)
RP unlock voltage
2
V
11.4
12
13
V
VPP lock-out voltage from write/erase
0
1.5
V
TA
Operating free air temperature during read/erase/program
Operating free-air temperature during read/erase/program
L suffix
E suffix
0
70
85
°
C
°
C
– 40
NOTE 7: Minimum value at TA = 25
°
C.
word/byte typical write and block-erase performance for TMS28F002AEy and TMS28F200AEy
(see Notes 8 and 9)
5-V VPP RANGE
3-V VCC
RANGE
12-V VPP RANGE
3-V VCC
RANGE
PARAMETER
5-V VCC
RANGE
5-V VCC
RANGE
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
Main block erase time
2.4
1.9
1.3
1.1
14
Main block byte-program time
1.7
1.4
1.6
1.2
4.2
Main block word-program time
1.1
0.9
0.8
0.6
2.1
Parameter/boot block-erase time
8. Typical values shown are at TA = 25
°
C and nominal conditions.
9. Excludes system-level overhead (all times in seconds)
0.84
0.8
0.44
0.34
7
NOTES:
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