參數(shù)資料
型號(hào): TMS28F002AXY
廠商: Texas Instruments, Inc.
英文描述: 262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
中文描述: 262144按8-BIT/131072由16位自動(dòng)選擇啟動(dòng)塊閃存
文件頁(yè)數(shù): 60/79頁(yè)
文件大?。?/td> 1064K
代理商: TMS28F002AXY
TMS28F002Axy, TMS28F200Axy
262144 BY 8-BIT/131072 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997
60
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
TMS28F002AZy and TMS28F200AZy
The TMS28F002AZy and TMS28F200AZy configurations offer a 5-V memory read with a 12-V program and
a 12-V erase for fast programming and erasing times. These configurations are offered in three temperature
ranges: 0
°
C to 70
°
C,– 40
°
C to 85
°
C and – 40
°
C to 125
°
C.
recommended operating conditions for TMS28F002AZy and TMS28F200AZy
MIN
NOM
MAX
UNIT
VCC
Supply voltage
During write/read/erase/erase-suspend
5-V VCC range
VPPL
12-V VPP range
TTL
4.5
5
5.5
V
VPP
Supply voltage
During read only
0
6.5
V
During write/erase/erase-suspend
11.4
12
12.6
VIH
High level dc input voltage
High-level dc input voltage
2
VCC + 0.3
VCC + 0.2
0.8
V
CMOS
VCC – 0.2
– 0.3
VIL
Low level dc input voltage
Low-level dc input voltage
TTL
V
CMOS
VSS – 0.2
VSS + 0.2
VLKO
VHH
VPPLK
VCC lock-out voltage from write/erase (see Note 7)
RP unlock voltage
2
V
11.4
12
13
V
VPP lock-out voltage from write/erase
0
1.5
V
L suffix
0
70
TA
Operating free-air temperature during read/erase/program
E suffix
Q suffix
– 40
– 40
85
125
°
C
NOTE 7:. Minimum value at TA = 25
°
C.
word/byte typical write and block-erase performance for TMS28F002AZy and TMS28F200AZy
(see Notes 8 and 9)
PARAMETER
12-V VPP AND
5-V VCC RANGES
MIN
TYP
MAX
Main block-erase time
1.1
14
Main block-byte program time
1.2
4.2
Main block-word program time
0.6
2.1
Parameter/boot-block erase time
8. Typical values shown are at TA = 25
°
C and nominal conditions.
9. Excludes system-level overhead (all times in seconds)
0.34
7
NOTES:
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