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| 型號(hào)： | TMS28F002AXY |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES |
| 中文描述： | 262144按8-BIT/131072由16位自動(dòng)選擇啟動(dòng)塊閃存 |
| 文件頁(yè)數(shù)： | 61/79頁(yè) |
| 文件大?。?/td> | 1064K |
| 代理商： | TMS28F002AXY |
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TMS28F002Axy, TMS28F200Axy
262144 BY 8-BIT/131072 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997
61
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics for TMS28F002AZy and TMS28F200AZy over recommended ranges of
supply voltage and operating free-air temperature using test conditions given in Table 9 (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VOH
High-level dc
output voltage
TTL
VCC = VCCMIN,
IOH = – 2.5 mA
VCC = VCCMIN,
IOH = – 100
μ
A
VCC = VCCMIN,
IOL = 5.8 mA
During read algorithm-selection mode
2.4
V
CMOS
VCC – 0.4
VOL
Low-level dc output voltage
0.45
V
VID
A9 selection code voltage
11.4
12.6
V
II
Input current (leakage), except for A9
when A9 = VID (see Note 10)
A9 selection code current
VCC = VCCMAX,
VI = 0 V to VCCMAX, RP = VHH
A9 = VID
RP = VHH
VCC = VCCMAX,
VO = 0 V to VCCmax
VPP
≤
VCC
±
1
μ
A
IID
IRP
500
μ
A
μ
A
RP boot-block unlock current
500
IO
Output current (leakage)
±
10
μ
A
IPPS
VPP standby current (standby)
VPP supply current (reset/deep
power-down mode)
5-V VCC range
10
μ
A
IPPL
RP = VSS
±
0.2 V, VPP
≤
VCC
5-V VCC range
5
μ
A
IPP1
VPP supply current (active read)
VPP supply current (active byte-write)
(see Notes 11 and 12)
VPP
≥
VCC
5-V VCC range
12-V VPP range,
5-V VCC range
12-V VPP range,
5-V VCC range
12-V VPP range,
5-V VCC range
12-V VPP range,
5-V VCC range
200
μ
A
IPP2
Programming in progress
20
mA
IPP3
VPP supply current (active word-write)
(see Notes 11 and 12)
Programming in progress
20
mA
IPP4
VPP supply current (block-erase)
(see Notes 11 and 12)
Block-erase in progress
15
mA
IPP5
VPP supply current (erase-suspend)
(see Notes 11 and 12)
Block-erase suspended
200
μ
A
ICCS
VCC supply current
(standby)
TTL-input level
VCC = VCC
E = RP = VIH
5 V VCCrange
5-V VCC range
2
mA
μ
A
CMOS-input level
,
130
VCC supply current (reset/deep
power-down mode)
0
°
C to 70
°
C
– 40
°
C to 85
°
C
– 40
°
C to 125
°
C
8
ICCL
RP = VSS
±
0.2 V
8
μ
A
30
ICC1
VCC supply current
(active read)
TTL-input level
E = VIL,
f = 10 MHz, 5-V VCC range
E = VSS, G = VCC,
f = 10 MHz, 5-V VCC range
VCC = VCCMAX,
Programming in progress
G = VIH
IOUT = 0 mA,
65
mA
CMOS-input level
IOUT = 0 mA,
60
mA
ICC2
VCC supply current (active byte-write)
(see Notes 11 and 12)
12-V VPP range,
5-V VCC range
12-V VPP range,
5-V VCC range
12-V VPP range,
5-V VCC range
50
mA
ICC3
VCC supply current (active word-write)
(see Notes 11 and 12)
VCC = VCCMAX,
Programming in progress
45
mA
ICC4
VCC supply current (block-erase)
(see Notes 11 and 12)
VCC = VCCMAX,
Block erase in progress
45
mA
ICC5
VCC supply current (erase-suspend)
(see Notes 11 and 12)
VCC = VCCMAX,
Block erase suspended
E = VIH,
5-V VCC range
10
mA
NOTES: 10. DQ15/A–1 is tested for output leakage only.
11. Characterization data available
12. All ac current values are RMS unless otherwise noted.
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