參數(shù)資料
型號(hào)： TMS28F002AXY
廠商： Texas Instruments, Inc.
英文描述： 262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
中文描述： 262144按8-BIT/131072由16位自動(dòng)選擇啟動(dòng)塊閃存
文件頁(yè)數(shù)： 42/79頁(yè)
文件大小： 1064K
代理商： TMS28F002AXY
TMS28F002Axy, TMS28F200Axy
262144 BY 8-BIT/131072 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS826D – JANUARY 1996 – REVISED SEPTEMBER 1997
42
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
TMS28F002AMy and TMS28F200AMy
The TMS28F002AMy and TMS28F200AMy configurations offer a 3-V or 5-V memory read with a 12-V program
and erase. These configurations are intended for low 3.3-V reads and the fast programming offered with the
12-V V
PP
and 5-V V
CC
. The configurations are offered in two different temperature ranges: 0
°
C to 70
°
C and
– 40
°
C to 85
°
C.
recommended operating conditions for TMS28F002AMy and TMS28F200AMy
MIN
NOM
3.3
MAX
3.6
UNIT
VCC
Supply voltage
During write/read/erase/erase suspend
During write/read/erase/erase-suspend
3.3-V VCC range
5-V VCC range
VPPL
12-V VPP range
TTL
3
V
4.5
5
5.5
VPP
Supply voltage
During read only (VPPL)
During write/erase/erase-suspend
0
6.5
V
11.4
12
12.6
3 3 V VCCrange
3.3-V VCC range
2
VCC + 0.5
VCC + 0.2
VCC + 0.3
VCC + 0.2
0.8
VIH
High-level dc input
voltage
CMOS
VCC – 0.2
V
5 V VCCrange
5-V VCC range
TTL
2
CMOS
VCC – 0.2
– 0.5
3 3 V VCCrange
3.3-V VCC range
TTL
VIL
Low-level dc input
voltage
CMOS
VSS – 0.2
– 0.3
VSS + 0.2
0.8
V
5 V VCCrange
5-V VCC range
TTL
CMOS
VSS – 0.2
VSS + 0.2
VLKO
VHH
VPPLK
VCC lock-out voltage from write/erase
RP unlock voltage
2
V
11.4
12
13
V
VPP lock-out voltage from write/erase
0
1.5
V
TA
Operating free air temperature during read/erase/program
Operating free-air temperature during read/erase/program
L suffix
E suffix
0
70
85
°
C
°
C
– 40
NOTE 7:. Minimum value at TA = 25
°
C.
word/byte typical write and block-erase performance for TMS28F002AMy and TMS28F200AMy
(see Notes 8 and 9)
12-V VPP RANGE
3.3-V VCC
RANGE
PARAMETER
5-V VCC
RANGE
MIN
TYP
MAX
TYP
MAX
Main block erase time
1.3
1.1
14
Main block byte-program time
1.6
1.2
4.2
Main block word-program time
0.8
0.6
2.1
Parameter/boot block-erase time
8. Typical values shown are at TA = 25
°
C and nominal conditions.
9. Excludes system-level overhead (all times in seconds).
0.44
0.34
7
NOTES:
相關(guān)PDF資料
PDF描述
TMS28F004AEB60BDBJL 524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
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