參數(shù)資料
型號(hào): TMS320C2812ZHHS
廠商: TEXAS INSTRUMENTS INC
元件分類: 數(shù)字信號(hào)處理
英文描述: 16-BIT, 150 MHz, OTHER DSP, PBGA179
封裝: LEAD FREE, BGA-179
文件頁(yè)數(shù): 34/156頁(yè)
文件大?。?/td> 1826K
代理商: TMS320C2812ZHHS
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Electrical Specifications
129
April 2001 Revised October 2005
SPRS174M
6.26
External Interface Ready-on-Read Timing With One External Wait State
Table 633. External Memory Interface Read Switching Characteristics (Ready-on-Read, 1 Wait State)
PARAMETER
MIN
MAX
UNIT
td(XCOH-XZCSL)
Delay time, XCLKOUT high to zone chip-select active low
1
ns
td(XCOHL-XZCSH)
Delay time, XCLKOUT high/low to zone chip-select inactive high
2
3
ns
td(XCOH-XA)
Delay time, XCLKOUT high to address valid
2
ns
td(XCOHL-XRDL)
Delay time, XCLKOUT high/low to XRD active low
1
ns
td(XCOHL-XRDH
Delay time, XCLKOUT high/low to XRD inactive high
2
1
ns
th(XA)XZCSH
Hold time, address valid after zone chip-select inactive high
ns
th(XA)XRD
Hold time, address valid after XRD inactive high
ns
During inactive cycles, the XINTF address bus will always hold the last address put out on the bus. This includes alignment cycles.
Table 634. External Memory Interface Read Timing Requirements (Ready-on-Read, 1 Wait State)
MIN
MAX
UNIT
ta(A)
Access time, read data from address valid
(LR + AR) 14
ns
ta(XRD)
Access time, read data valid from XRD active low
AR 12
ns
tsu(XD)XRD
Setup time, read data valid before XRD strobe inactive high
12
ns
th(XD)XRD
Hold time, read data valid after XRD inactive high
0
ns
LR = Lead period, read access. AR = Active period, read access. See Table 628.
Table 635. Synchronous XREADY Timing Requirements (Ready-on-Read, 1 Wait State)§
MIN
MAX
UNIT
tsu(XRDYsynchL)XCOHL
Setup time, XREADY (synchronous) low before XCLKOUT high/low
15
ns
th(XRDYsynchL)
Hold time, XREADY (synchronous) low
12
ns
te(XRDYsynchH)
Earliest time XREADY (synchronous) can go high before the sampling XCLKOUT
edge
3
ns
tsu(XRDYsynchH)XCOHL
Setup time, XREADY (synchronous) high before XCLKOUT high/low
15
ns
th(XRDYsynchH)XZCSH
Hold time, XREADY (synchronous) held high after zone chip select high
0
ns
§ The first XREADY (synchronous) sample occurs with respect to E in Figure 632:
E = (XRDLEAD + XRDACTIVE) tc(XTIM)
When first sampled, if XREADY (synchronous) is found to be high, then the access will complete. If XREADY (synchronous) is found to be low,
it will be sampled again each tc(XTIM) until it is found to be high.
For each sample (n) the setup time (D) with respect to the beginning of the access can be calculated as:
D = (XRDLEAD + XRDACTIVE +n 1) tc(XTIM) tsu(XRDYsynchL)XCOHL
where n is the sample number: n = 1, 2, 3, and so forth.
Table 636. Asynchronous XREADY Timing Requirements (Ready-on-Read, 1 Wait State)
MIN
MAX
UNIT
tsu(XRDYAsynchL)XCOHL
Setup time, XREADY (asynchronous) low before XCLKOUT high/low
11
ns
th(XRDYAsynchL)
Hold time, XREADY (asynchronous) low
8
ns
te(XRDYAsynchH)
Earliest time XREADY (asynchronous) can go high before the sampling
XCLKOUT edge
3
ns
tsu(XRDYAsynchH)XCOHL
Setup time, XREADY (asynchronous) high before XCLKOUT high/low
11
ns
th(XRDYasynchH)XZCSH
Hold time, XREADY (asynchronous) held high after zone chip select high
0
ns
The first XREADY (asynchronous) sample occurs with respect to E in Figure 633:
E = (XRDLEAD + XRDACTIVE 2) tc(XTIM)
When first sampled, if XREADY (asynchronous) is found to be high, then the access will complete. If XREADY (asynchronous) is found to be
low, it will be sampled again each tc(XTIM) until it is found to be high.
For each sample, setup time from the beginning of the access can be calculated as:
D = (XRDLEAD + XRDACTIVE 3 +n) tc(XTIM) tsu(XRDYasynchL)XCOHL
where n is the sample number: n = 1, 2, 3, and so forth.
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