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參數(shù)資料
| 型號(hào)： | W25Q80BVSNAP |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類(lèi)： | PROM |
| 英文描述： | 8M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.150 INCH, GREEN, PLASTIC, SOIC-8 |
| 文件頁(yè)數(shù)： | 35/75頁(yè) |
| 文件大小： | 1055K |
| 代理商： | W25Q80BVSNAP |
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W25Q80BV
- 40 -
9.2.22 Quad Input Page Program (32h)
The Quad Page Program instruction allows up to 256 bytes of data to be programmed at previously
erased (FFh) memory locations using four pins: IO0, IO1, IO2, and IO3. The Quad Page Program can
improve performance for PROM Programmer and applications that have slow clock speeds <5MHz.
Systems with faster clock speed will not realize much benefit for the Quad Page Program instruction
since the inherent page program time is much greater than the time it take to clock-in the data.
To use Quad Page Program the Quad Enable in Status Register-2 must be set (QE=1). A Write Enable
instruction must be executed before the device will accept the Quad Page Program instruction (Status
Register-1, WEL=1). The instruction is initiated by driving the /CS pin low then shifting the instruction
code “32h” followed by a 24-bit address (A23-A0) and at least one data byte, into the IO pins. The /CS pin
must be held low for the entire length of the instruction while data is being sent to the device. All other
functions of Quad Page Program are identical to standard Page Program. The Quad Page Program
instruction sequence is shown in figure 20.
/CS
CLK
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (32h)
8
9
10
28
29
30
32
33
34
35
36
37
4
0
24-Bit Address
23
22
21
3
2
1
0
*
31
/CS
CLK
5
1
Byte 1
6
2
7
3
4
0
5
1
6
2
7
3
4
0
5
1
6
2
7
3
4
0
5
1
6
2
7
3
Byte 2
Byte 3
Byte
256
0
4
0
5
1
6
2
7
3
4
0
5
1
6
2
7
3
4
0
5
1
6
2
7
3
53
6
53
7
53
8
53
9
54
0
54
1
54
2
54
3
Mode 0
Mode 3
Byte
253
Byte
254
Byte
255
IO
0
IO
1
IO
2
IO
3
IO
0
IO
1
IO
2
IO
3
***
****
= MSB
*
Figure 20. Quad Input Page Program Instruction Sequence Diagram
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q80BVSNIG | 功能描述:IC SPI FLASH 8MBIT 8SOIC RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 異步 存儲(chǔ)容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱(chēng):71V256SA15PZGI8 |
| W25Q80BVSNIG TR | 制造商:Winbond Electronics Corp 功能描述: 制造商:Winbond Electronics Corp 功能描述:IC FLASH 8MBIT 104MHZ 8SOIC |
| W25Q80BVSNIP | 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q80BVSSAG | 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q80BVSSAP | 制造商:WINBOND 制造商全稱(chēng):Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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