參數(shù)資料
型號(hào)： W25Q80BVSNAP
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 8M X 1 SPI BUS SERIAL EEPROM, PDSO8
封裝： 0.150 INCH, GREEN, PLASTIC, SOIC-8
文件頁(yè)數(shù)： 43/75頁(yè)
文件大?。?/td> 1055K
代理商： W25Q80BVSNAP
W25Q80BV
- 48 -
9.2.30
Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, or obtain the devices electronic identification (ID) number.
To release the device from the power-down state, the instruction is issued by driving the /CS pin low,
shifting the instruction code “ABh” and driving /CS high as shown in figure 28a. Release from power-
down will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal
operation and other instructions are accepted. The /CS pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in figure
28a. The Device ID values for the W25Q80BV is listed in Manufacturer and Device Identification table.
The Device ID can be read continuously. The instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction is
the same as previously described, and shown in figure 28b, except that after /CS is driven high it must
remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will
resume normal operation and other instructions will be accepted. If the Release from Power-down /
Device ID instruction is issued while an Erase, Program or Write cycle is in process (when BUSY equals
1) the instruction is ignored and will not have any effects on the current cycle.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (ABh)
Mode 0
Mode 3
tRES1
Power-down current
Stand-by current
Figure 28a. Release Power-down Instruction Sequence
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25Q80BVSNIG 功能描述:IC SPI FLASH 8MBIT 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8
W25Q80BVSNIG TR 制造商:Winbond Electronics Corp 功能描述: 制造商:Winbond Electronics Corp 功能描述:IC FLASH 8MBIT 104MHZ 8SOIC
W25Q80BVSNIP 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BVSSAG 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BVSSAP 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
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