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參數資料
| 型號： | μPD29F008AL-X |
| 廠商： | NEC Corp. |
| 英文描述： | 8 M-Bit CMOS Low Voltage Flash Memory(8M CMOS低壓閃存) |
| 中文描述： | 8 m位的CMOS低電壓快閃記憶體（800萬的CMOS低壓閃存） |
| 文件頁數： | 28/44頁 |
| 文件大?。?/td> | 249K |
| 代理商： | ΜPD29F008AL-X |
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Preliminary Data Sheet
28
μ
PD29F008AL-X
7. Electrical Characteristics
Absolute Maximum Ratings
Condition
Symbol
Test condition
Rating
Unit
Supply voltage
V
CC
with respect to GND
0.5 to + 5.5
V
Input voltage
V
I
with respect to GND
except GND, A9, /RESET, /OE
0.5
Note 1
to +5.5
Note 2
V
GND, A9, /RESET, /OE
0.5
Note 1
to +13.5
Note 2
Output voltage
V
O
with respect to GND
0.5
Note 1
to V
CC
+0.5
Note 2
V
Ambient operating temperature
T
A
25 to +85
°
C
Storage temperature
T
stg
65 to +125
°
C
T
bias
under bias
25 to +85
Notes 1.
–2.0 V (MIN.) (pulse width
≤
20 ns)
2.
V
CC
+ 2.0 V (MAX.) (pulse width
≤
20 ns)
Caution
Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Capacitance (T
A
=
25
°
C, f = 1 MHz)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
Unit
Input capacitance
C
I
V
IN
= 0 V
6.0
7.5
pF
Output capacitance
C
O
V
OUT
= 0 V
8.5
12.0
pF
Recommended Operating Conditions
Parameter
Symbol
Test condition
B90X, B12X
C15X, C12X
Unit
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Supply voltage
V
CC
2.7
3.6
2.2
2.7
V
High level
input voltage
V
IH
2.0
V
CC
+0.3
Note 1
0.7
×
V
CC
V
CC
+0.3
Note 1
V
V
ID
High voltage is applied
(A9, /RESET, /OE)
11.5
12.5
11.5
12.5
Low level
input voltage
V
IL
0.5
Note 2
+0.8
0.5
Note 2
+0.8
V
Ambient operating
temperature
T
A
25
+85
–25
+85
°
C
Notes 1.
V
CC
+ 0.6 V (MAX.) (pulse width
≤
20 ns)
2.
–0.6 V (MIN.) (pulse width
≤
20 ns)
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