參數(shù)資料
型號: μPD29F008AL-X
廠商: NEC Corp.
英文描述: 8 M-Bit CMOS Low Voltage Flash Memory(8M CMOS低壓閃存)
中文描述: 8 m位的CMOS低電壓快閃記憶體(800萬的CMOS低壓閃存)
文件頁數(shù): 7/44頁
文件大?。?/td> 249K
代理商: ΜPD29F008AL-X
Preliminary Data Sheet
7
μ
PD29F008AL-X
1. Input / Output Pin Function
Pin name
Input / Output
Function
A0 - A19
Input
Address input bus
A9
Input
Address input pin.
If 11.5 to 12.5 V is applied to A9, the chip enters the read product ID code mode.
In this mode, and input to A0 causes the following codes to be output.
A0 = Low level : Manufacturer code is output.
A0 = High level : Device code is output.
I/O0 - I/O7
Input / Output
Data input / output bus.
/CE
Input
This pin inputs the signal that activates the chip.
When high level, the chip enters the standby mode.
/OE
Input
This pin inputs the read operation control signal.
When high level, output is disabled.
/WE
Input
This pin inputs the write operation control signal.
When low level, command input is accepted.
/RESET
Input
This pin inputs hardware reset.
When low level, hardware reset is performed.
If 11.5 to 12.5 V is applied to /RESET, the chip enters the temporary sector unprotect mode.
RY (/BY)
Output
This pin indicates whether automatic program / erase is currently being executed. It uses
open drain connection.
Low level indicates the busy state during which the device is performing automatic program /
erase.
High level indicates the device is in the ready state and will accept the next operation. In this
case, the device is either in the erase suspend mode or the standby mode.
V
CC
Supply Voltage
GND
Ground
NC
No Connection
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