參數(shù)資料
型號(hào): μPD29F008AL-X
廠商: NEC Corp.
英文描述: 8 M-Bit CMOS Low Voltage Flash Memory(8M CMOS低壓閃存)
中文描述: 8 m位的CMOS低電壓快閃記憶體(800萬的CMOS低壓閃存)
文件頁數(shù): 35/44頁
文件大?。?/td> 249K
代理商: ΜPD29F008AL-X
Preliminary Data Sheet
35
μ
PD29F008AL-X
Write Cycle Timing Chart (/CE Controlled)
Remarks 1.
This timing chart shows the last two write cycles among the write command sequence's four write
cycles, and data polling.
2.
PA : Write address
PD : Write data
/I/O7 : The output of the complement of the data written to the device.
D
OUT
: The output of the data written to the device.
Address (Input)
/CE (Input)
/CE (Input)
/WE (Input)
I/O (Input / Output)
t
DS
t
GHEL
t
WS
t
WHWH1
t
WC
t
AS
t
AH
PD
/I/O7
D
OUT
t
OH
t
OE
t
CE
t
RC
555H
PA
PA
A0H
(3rd and 4th write cycle)
D
OUT
t
WH
t
DH
t
CP
t
CPH
(Data polling)
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