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| 型號： | 256MBDDRSDRAM |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Specification Version 0.3 |
| 中文描述： | DDR SDRAM的規(guī)格版本0.3 |
| 文件頁數(shù)： | 33/51頁 |
| 文件大?。?/td> | 658K |
| 代理商： | 256MBDDRSDRAM |
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- 33 -
REV. 0.3 November 2. 2000
256Mb DDR SDRAM
Preliminary
5. Functional Truth Table
Table 9-1. Functional truth table
Current State
CS
RAS
CAS
WE
Address
Command
Action
PRECHARGE
STANDBY
L
H
H
L
X
Burst Stop
ILLEGAL*2
L
H
L
X
BA, CA, A10
READ/WRITE
ILLEGAL*2
L
L
H
H
BA, RA
Active
Bank Active, Latch RA
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL*4
L
L
L
H
X
Refresh
AUTO-Refresh*5
L
L
L
L
Op-Code, Mode-Add
MRS
Mode Register Set*5
ACTIVE
STANDBY
L
H
H
L
X
Burst Stop
NOP
L
H
L
H
BA, CA, A10
READ/READA
Begin Read, Latch CA,
Determine Auto-Precharge
L
H
L
L
BA, CA, A10
WRITE/WRITEA
Begin Write, Latch CA,
Determine Auto-Precharge
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L
BA, A10
PRE/PREA
Precharge/Precharge All
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
L
Op-Code, Mode-Add
MRS
ILLEGAL
READ
L
H
H
L
X
Burst Stop
Terminate Burst
L
H
L
H
BA, CA, A10
READ/READA
Terminate Burst, Latch CA,
Begin New Read, Determine
Auto-Precharge*3
L
H
L
L
BA, CA, A10
WRITE/WRITEA
ILLEGAL
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
L
L
H
L
BA, A10
PRE/PREA
Terminate Burst, Precharge
L
L
L
H
X
Refresh
ILLEGAL
L
L
L
H
L
H
L
L
Op-Code, Mode-Add
X
MRS
Burst Stop
ILLEGAL
ILLEGAL
Terminate Burst With DM=High,
Latch CA, Begin Read, Deter-
mine Auto-Precharge*3
WRITE
L
H
L
H
BA, CA, A
10
READ/READA
L
H
L
L
BA, CA, A
10
WRITE/WRITEA
Terminate Burst, Latch CA,
Begin new Write, Determine
Auto-Precharge*3
L
L
H
H
BA, RA
Active
Bank Active/ILLEGAL*2
Terminate Burst With DM=High,
Precharge
ILLEGAL
ILLEGAL
L
L
H
L
BA, A
10
PRE/PREA
L
L
L
L
L
L
H
L
X
Op-Code, Mode-Add
Refresh
MRS
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