參數(shù)資料
型號: 256MBDDRSDRAM
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Specification Version 0.3
中文描述: DDR SDRAM的規(guī)格版本0.3
文件頁數(shù): 7/51頁
文件大?。?/td> 658K
代理商: 256MBDDRSDRAM
- 7 -
REV. 0.3 November 2. 2000
256Mb DDR SDRAM
General Information
Preliminary
Organization
133Mhz w/ CL=2
133Mhz w/ CL=2.5
100Mhz w/ CL=2
64Mx4
K4H560438B-TCA2
K4H560438B-TCB0
K4H560438B-TCA0
K4H560438B-TLA2
K4H560438B-TLB0
K4H560438B-TLA0
32Mx8
K4H560838B-TCA2
K4H560838B-TCB0
K4H560838B-TCA0
K4H560838B-TLA2
K4H560838B-TLB0
K4H560838B-TLA0
16Mx16
K4H561638B-TCA2
K4H561638B-TCB0
K4H561638B-TCA0
K4H561638B-TLA2
K4H561638B-TLB0
K4H561638B-TLA0
T
:
TSOP2 (400mil x 875mil)
A0
:
10ns@CL2
A2
:
7.5ns@CL2
B0
:
7.5ns@CL2.5
C :
(Commercial, Normal)
L :
(Commercial, Low)
04
:
x4
08
:
x8
16
:
x16
32
:
x32
6. Bank
64
:
64M 4K/64ms
28
:
128M 4K/64ms
56
:
256M 8K/64ms
51
:
512M 8K/64ms
1G
:
1G 16K/32ms
H
:
DDR SDRAM
M
:
1st Generation
A
:
2nd Generation
B
:
3rd Generation
C
:
4th Generation
D
:
5th Generation
E
:
6th Generation
K 4 H XX XX X X X - X X
Memory
DRAM
Small Classification
Density and Refresh
Temperature & Power
Package
Organization
Version
Interface (VDD & VDDQ)
1. SAMSUNG Memory : K
2. DRAM : 4
3. Small Classification
4. Density & Refresh
5. Organization
8. Version
9. Package
10. Temperature & Power
11. Speed
3
:
4 Bank
1 2 3 4 5 6 7 8 9 10 11
XX
8
:
SSTL-2(2.5V, 2.5V)
7. Interface (VDD & VDDQ)
Speed
Bank
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