參數(shù)資料
型號: ATMEGA103-6AI
廠商: Atmel
文件頁數(shù): 12/141頁
文件大?。?/td> 0K
描述: IC MCU 128K 6MHZ A/D IT 64TQFP
產(chǎn)品培訓(xùn)模塊: megaAVR Introduction
標準包裝: 90
系列: AVR® ATmega
核心處理器: AVR
芯體尺寸: 8-位
速度: 6MHz
連通性: SPI,UART/USART
外圍設(shè)備: POR,PWM,WDT
輸入/輸出數(shù): 32
程序存儲器容量: 128KB(64K x 16)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 4K x 8
RAM 容量: 4K x 8
電壓 - 電源 (Vcc/Vdd): 4 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 64-TQFP
包裝: 托盤
配用: ATSTK501-ND - ADAPTER KIT FOR 64PIN AVR MCU
109
ATmega103(L)
0945I–AVR–02/07
Figure 74. Programming the Flash Waveforms (Continued)
Programming the EEPROM
The programming algorithm for the EEPROM data memory is as follows (refer to “Pro-
gramming the Flash” on page 107 for details on command, address and data loading):
1.
A: Load Command “0001 0001”.
2.
H: Load Address High Byte ($00 - $0F).
3.
B: Load Address Low Byte ($00 - $FF).
4.
E: Load Data Low Byte ($00 - $FF).
L: Write Data Low Byte.
1.
Set BS to “0”. This selects low data.
2.
Give WR a negative pulse. This starts programming of the data byte. RDY/BSY
goes low.
3.
Wait until RDY/BSY goes high to program the next byte.
(See Figure 75 for signal waveforms.)
The loaded command and address are retained in the device during programming. For
efficient programming, the following should be considered:
The command needs only be loaded once when writing or reading multiple memory
locations.
Address High Byte needs only be loaded before programming a new 256-word page
in the EEPROM.
Skip writing the data value $FF that is the contents of the entire EEPROM after a
chip erase.
These considerations also apply to Flash, EEPROM and signature bytes reading.
DATA HIGH
DATA
XA1
XA0
BS1
XTAL1
WR
RDY/BSY
RESET
+12V
OE
BS2
PAGEL
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