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參數(shù)資料
| 型號： | BGY288 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900 |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 8 X 8 MM, PLASTIC, SOT-775A, 16 PIN |
| 文件頁數(shù)： | 12/22頁 |
| 文件大?。?/td> | 140K |
| 代理商： | BGY288 |
9397 750 14011
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 2 February 2005
12 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
[1]
Condition to set V
PC
: V
BAT
= 3.6 V;
δ
= 2 : 8; P
D(HB)
= 0 dBm; T
mb
= 25
°
C; f = 1747.6 MHz for DCS1800; f = 1880 MHz for PCS1900.
Conditions for power variation: P
D(HB)
=
2 dBm to +2 dBm; f = 1710 MHz to 1785 MHz for DCS1800;
f = 1850 MHz to 1910 MHz for PCS1900; T
mb
= 15
°
C to 70
°
C; V
BAT
= 3.2 V to 4.2 V; V
STAB
= 2.8 V
±
20 mV.
Conditions for power variation: P
D(HB)
=
2 dBm to +2 dBm; f = 1710 MHz to 1785 MHz for DCS1800;
f = 1850 MHz to 1910 MHz for PCS1900; T
mb
=
20
°
C to +90
°
C; V
BAT
= 3.2 V to 4.2 V; V
STAB
= 2.8 V
±
20 mV.
Conditions for power variation: P
D(HB)
= 0 dBm; f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900;
T
mb
= 25
°
C; V
BAT
= 3.6 V; V
STAB
= 2.8 V
±
20 mV.
[2]
[3]
[4]
SSG
small signal gain
f
0
= 1785 MHz for DCS1800;
f
0
= 1910 MHz for PCS1900;
P
L(HB)
= 0 dBm to 32 dBm;
f
SS2
= f
0
+ 20 MHz; P
SS2
=
40 dBm;
SSG = P
L(SS2)
P
SS2
; see
Figure 4
P
L(HB)
= 0 dBm to 32 dBm;
6.5 % AM modulation with
f
mod
= 67 kHz at RFI_HB
f
mod
= 140 kHz at RFI_HB
f
mod
= 271 kHz at RFI_HB
P
D(HB)
=
0.5 dBm to +0.5 dBm;
P
L(HB)
= 0 dBm to 32 dBm
P
L(HB)
= 0 dBm to 32 dBm
P
L(HB)
from 0 dBm to 32 dBm and
from 32 dBm to 0 dBm
-
-
33
dB
AM/AM
AM/AM conversion
-
-
-
-
5
8
14
2
8
13
20
4
%
%
%
deg/dB
AM/PM
AM/PM conversion
maximum control slope
carrier rise and fall time
-
-
-
-
200
2
dB/V
μ
s
t
r
, t
f
f
CL
control loop bandwidth
stability
-
-
200
-
-
36
kHz
dBm
P
L(HB)
≤
32 dBm; VSWR
≤
7 : 1 through all
phases; V
BAT
= 3.2 V to 4.6 V
V
BAT
= 3.2 V to 4.6 V; P
L(HB)
≤
32 dBm;
δ
= 4 : 8; VSWR
≤
8 : 1 through all phases
ruggedness
no degradation
Table 8:
Z
S
= Z
L
= 50
; V
BAT
= 3.6 V; V
STAB
= 2.8 V; T
mb
= 25
°
C;
δ
= 1 : 8 to 4 : 8; t
p
= 575
μ
s to 2300
μ
s; P
D(HB)
= 0 dBm; spurious
signals on P
D(HB)
<
50 dBm; HB TX mode selected;
f = 1710 MHz to 1785 MHz for DCS1800; f = 1850 MHz to 1910 MHz for PCS1900; unless otherwise specified.
Symbol
Parameter
Conditions
Dynamic characteristics DCS1800/PCS1900 transmit mode
…continued
Min
Typ
Max
Unit
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