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參數(shù)資料
| 型號(hào)： | BGY288 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900 |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 8 X 8 MM, PLASTIC, SOT-775A, 16 PIN |
| 文件頁數(shù)： | 5/22頁 |
| 文件大小： | 140K |
| 代理商： | BGY288 |
9397 750 14011
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 2 February 2005
5 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
6.
Timing
Fig 3.
Timing diagram
Table 4:
Z
S
= Z
L
= 50
; P
D(LB)
= 0 dBm to 4 dBm / P
D(HB)
=
2 dBm to +2 dBm; V
BAT
= 3.1 V to 4.6 V;
V
STAB
= 2.6 V to 3.0 V; T
mb
=
20
°
C to 85
°
C;
δ
= 1 : 8 to 4 : 8; unless otherwise specified.
Symbol Parameter
t
d1
delay time; V
STAB
to high voltage before TXON goes HIGH
t
d2
delay time; BAND to LOW or HIGH before TXON goes HIGH 0
t
d3
delay time; RF signal on RFI_HB or RFI_LB before PC
ramp-up
t
d4
delay time; PC start of ramp-up after TXON goes HIGH
t
d5
delay time; TXON to LOW after transition of PC to off
condition
t
d6
delay time; V
STAB
to 0 V, after TXON goes LOW
t
d7
delay time; change of BAND after TXON goes LOW
t
d8
delay time; removal of RF signal on RFI_HB or RFI_LB after
transition of PC to off condition
t
d9
time between PC ramp-up and actual P
L
increase
Timing characteristics
Min
0
Typ
-
-
-
Max Unit
-
-
-
μ
s
μ
s
μ
s
0
10
0
-
-
-
-
μ
s
μ
s
10
0
0
-
-
-
-
-
-
μ
s
μ
s
μ
s
-
-
3
μ
s
001aab847
t
d4
t
d1
t
d3
t
d9
t
d8
t
d5
t
d7
t
d6
t
d2
V
STAB
TXON
BAND
P
D(LB)
, P
D(HB)
P
L(LB)
, P
L(HB)
10
μ
s
8
μ
s
10
μ
s
(147 bits)
7056/13 (542.8)
μ
s
+
4
+
1
1
6
(**)
30
(***)
(*)
dB
PC
t
10
μ
s
8
μ
s
10
μ
s
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