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參數(shù)資料
| 型號： | BGY288 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900 |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 8 X 8 MM, PLASTIC, SOT-775A, 16 PIN |
| 文件頁數(shù)： | 9/22頁 |
| 文件大?。?/td> | 140K |
| 代理商： | BGY288 |
9397 750 14011
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 2 February 2005
9 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
P
L(LB)
available output power
GSM850
V
PC
= 2.2 V
V
PC
= 2.0 V; V
BAT
= 3.2 V;
P
D(LB)
= 0 dBm;
δ
= 2 : 8
V
PC
= 2.0 V; V
BAT
= 3.2 V;
P
D(LB)
= 0 dBm;
δ
= 2 : 8; T
mb
= 85
°
C
EGSM900
V
PC
= 2.2 V
V
PC
= 2.0 V; V
BAT
= 3.2 V;
P
D(LB)
= 0 dBm;
δ
= 2 : 8
V
PC
= 2.0 V; V
BAT
= 3.2 V;
P
D(LB)
= 0 dBm;
δ
= 2 : 8; T
mb
= 85
°
C
saturated power
P
L(LB)
= 34 dBm
saturated power
P
L(LB)
= 34 dBm
P
L(LB)
= 31 dBm to 34 dBm for EGSM900
and P
L(LB)
= 31 dBm to 33 dBm for
GSM850; set by PC
P
L(LB)
= 13 dBm to 31 dBm; set by PC
P
L(LB)
= 6 dBm to 13 dBm; set by PC
P
L(LB)
= 31 dBm to 34 dBm for EGSM900
and P
L(LB)
= 31 dBm to 33 dBm for
GSM850; set by PC
P
L(LB)
= 13 dBm to 31 dBm; set by PC
P
L(LB)
= 6 dBm to 13 dBm; set by PC
P
L(LB)
= 31 dBm to 34 dBm; set by PC
34.2
32.8
35
-
-
-
dBm
dBm
32.3
-
-
dBm
35.2
33.8
36
-
-
-
dBm
dBm
33.3
-
-
dBm
η
efficiency GSM850
-
-
-
-
50
45
55
50
-
-
-
-
-
+0.7
%
%
%
%
dB
efficiency EGSM900
P
L(LB)
output power variation at
nominal temperature range
[1] [2]
0.7
[1] [2]
1.5
[1] [2]
2
[1] [3]
1.2
-
-
-
+1.5
+2
+1.2
dB
dB
dB
output power variation at
extreme temperature range
[1] [3]
2
[1] [3]
3
[1] [4]
0.3
-
-
-
+2
+3
+0.3
dB
dB
dB
output power variation of
frequency
harmonics
isolation H
2
into
DCS1800/PCS1900
isolation H
3
into
DCS1800/PCS1900
isolation
H
2
to H
13
P
L(LB)
≤
34 dBm
measured at RFO_HB; P
L(LB)
= 34 dBm
-
-
-
-
5
15
dBm
dBm
measured at RFO_HB; P
L(LB)
= 34 dBm
-
-
25
dBm
P
D(LB)
= 4 dBm; V
PC
= 0.15 V; Standby
mode
P
D(LB)
= 4 dBm; V
PC
= 0.15 V; LB TX
mode
P
L(LB)
< 6 dBm
P
L(LB)
= 6 dBm to 34 dBm;
-
-
36
dBm
-
-
36
dBm
VSWR
in
input VSWR
-
-
-
2 : 1
6 : 1
3 : 1
Table 7:
Z
S
= Z
L
= 50
; V
BAT
= 3.6 V; V
STAB
= 2.8 V; T
mb
= 25
°
C;
δ
= 1 : 8 to 4 : 8; t
p
= 575
μ
s to 2300
μ
s; P
D(LB)
= 2 dBm; spurious
signals on P
D(LB)
<
50 dBm; LB TX mode selected;
f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified.
Symbol
Parameter
Conditions
Dynamic characteristics GSM850 and EGSM900 transmit mode
…continued
Min
Typ
Max
Unit
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