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參數(shù)資料
| 型號： | BGY288 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900 |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | 8 X 8 MM, PLASTIC, SOT-775A, 16 PIN |
| 文件頁數(shù)： | 8/22頁 |
| 文件大小： | 140K |
| 代理商： | BGY288 |
9397 750 14011
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 2 February 2005
8 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
[1]
Power amplifier is functional from 2.9 V to 3.1 V, but will not meet all electrical specification points.
[2]
Power amplifier is functional from 4.6 V to 5.2 V under 50
conditions, but will not meet all electrical specification points.
P
D(LB)
= 0 dBm to 4 dBm / P
D(HB)
=
2 dBm to +2 dBm; V
BAT
= 3.1 V to 4.6 V; V
STAB
= 2.6 V to 3.0 V; T
mb
=
20
°
C to +85
°
C;
δ
= 1 : 8 to 4 : 8; unless otherwise specified.
[3]
9.
Dynamic characteristics
I
STAB
current consumption
HB TX or LB TX mode
Standby mode
-
-
-
-
1
1
mA
mA
Digital inputs: TXON, BAND
[3]
V
IL
LOW-level input voltage
V
IH
HIGH-level input voltage
I
IL
LOW-level input current
I
IH
HIGH-level input current
C
i
input capacitance
Analog inputs: PC
[3]
V
PC
power control voltage
I
PC
power control current
C
PC
PC input capacitance
R
PC
PC input resistance
0
1.4
-
-
-
-
-
-
-
4
0.5
3
3
15
-
V
V
μ
A
μ
A
pF
0
100
-
-
-
-
4
1.2
2.5
-
-
-
V
μ
A
pF
M
Table 6:
Z
S
= Z
L
= 50
; P
D(HB)
, P
D(LB)
= 0 mW; V
BAT
= 3.6 V; V
STAB
= 2.8 V; T
mb
= 25
°
C; unless otherwise specified.
Symbol
Parameter
Conditions
Static characteristics
…continued
Min
Typ
Max
Unit
Table 7:
Z
S
= Z
L
= 50
; V
BAT
= 3.6 V; V
STAB
= 2.8 V; T
mb
= 25
°
C;
δ
= 1 : 8 to 4 : 8; t
p
= 575
μ
s to 2300
μ
s; P
D(LB)
= 2 dBm; spurious
signals on P
D(LB)
<
50 dBm; LB TX mode selected;
f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified.
Symbol
Parameter
Conditions
P
D(LB)
RF input power
V
PC
reference voltage to set
output power
f = 836.5 MHz for GSM850;
P
L(LB)
= 35 dBm
f = 897.5 MHz for EGSM900;
f = 836.5 MHz for GSM850;
P
L(LB)
= 3 dBm
Dynamic characteristics GSM850 and EGSM900 transmit mode
Min
0
-
Typ
2
-
Max
4
2
Unit
dBm
V
f = 897.5 MHz for EGSM900;
0.2
-
-
V
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