參數(shù)資料
型號(hào)： BGY288
廠商： NXP SEMICONDUCTORS
元件分類： 衰減器
英文描述： Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900
中文描述： 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝： 8 X 8 MM, PLASTIC, SOT-775A, 16 PIN
文件頁數(shù)： 6/22頁
文件大?。?/td> 140K
代理商： BGY288
9397 750 14011
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 2 February 2005
6 of 22
Philips Semiconductors
BGY288
Power amplifier with integrated control loop
6.1 Ramp-up
V
STAB
voltage must be available at minimum t
d1
before TXON goes HIGH (power control
loop activates).
BAND selects the correct transmit channel (GSM850/EGSM900, or DCS1800/PCS1900).
BAND must be at the correct value before the rising edge of TXON.
The transition of TXON to HIGH enables the power control loop; the TXON minimum t
d4
period is a set-up time which allows the correct internal biasing conditions and the charge
on the integration capacitors to be at the correct starting value before PC starts to
increase. RF power must be present at the input of the selected channel (P
D(LB)
or P
D(HB)
)
before PC starts to ramp-up.
The required RF output power level is reached by increasing PC in steps to the
corresponding voltage level. The sequence of PC steps can be chosen to have
approximately a quarter cosine wave ramp-up of P
L(LB)
or P
L(HB)
in order to prevent
violation of the GSM power mask, and at the same time prevent violation of the spectrum
due to transients.
To avoid violation of the lowest power level in the GSM power mask (indicated by *;
see
Figure 3
), the BGY288 provides sufficient isolation when TXON goes HIGH with PC
at minimum value and RF power at input of power amplifier.
In LB TX mode, the system specification for maximum output power of the handset is
36 dBm. In HB TX mode, the system specification for maximum output power of the
handset is
48 dBm. In BGY288 transmit mode, the handset antenna switch can be used
to provide isolation between the power amplifier and the antenna by setting the antenna
switch to Rx mode. This condition is used for the transmit mode isolation parameters
given in
Section 9
.
6.2 Ramp-down
PC steps down from the voltage level for the current power level to off state. The
sequence of PC steps can be chosen to have approximately a quarter cosine wave
ramp-down of P
L(LB)
or P
L(HB)
in order to prevent violation of the GSM power mask, and at
the same time prevent violation of the spectrum due to transients.
The power control loop can be switched off (TXON goes LOW) as soon as PC has
reached the off state level. At the same time, BAND is allowed to change polarity and the
RF input power at the selected channel (P
D(LB)
or P
D(HB)
) can be removed. When input
power is removed, there is no additional isolation specification required to meet the GSM
system specification. In LB TX mode, the system specification for maximum output power
of the handset is
54 dBm. In HB TX mode the system specification for maximum output
power is
48 dBm.
At minimum t
d6
after TXON goes LOW (power control loop deactivates) and when all
charge in the power control loop capacitors is removed, the BGY288 can go into Idle
mode (V
STAB
= 0 V).
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