參數(shù)資料
型號(hào)： BSH112
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： MINIATURE, PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 5/13頁(yè)
文件大?。?/td> 290K
代理商： BSH112
Philips Semiconductors
BSH112
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 25 August 2000
5 of 13
9397 750 07305
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 10
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
G
=
±
1 mA; V
DS
= 0 V
60
55
16
75
22
V
V
V
V
(BR)GSS
gate-source breakdown
voltage
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
V
GS(th)
Figure 9
T
j
= 25
°
C
T
j
= 150
°
C
T
j
=
55
°
C
V
DS
= 48 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 500 mA;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
= 4.5 V; I
D
= 75 mA;
Figure 7
and
8
T
j
= 25
°
C
1
0.6
2
3.5
V
V
V
I
DSS
drain-source leakage current
0.01
50
1.0
10
500
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
2.8
5
9.25
3.8
5.3
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 10 V; I
D
= 200 mA;
Figure 11
V
GS
= 0 V; V
DS
= 10 V;
f = 1 MHz;
Figure 12
100
300
mS
C
iss
C
oss
C
rss
t
on
t
off
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
13
8
4
3
9
40
30
10
10
15
pF
pF
pF
ns
ns
V
DD
= 50 V; R
D
= 250
;
V
GS
= 10 V; R
G
= 50
;
R
GS
= 50
Source-drain diode
V
SD
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
I
S
= 300 mA; V
GS
= 0 V;
Figure 13
I
S
= 300 mA;
dI
S
/dt =
100 A/
μ
s;
V
GS
= 0 V; V
DS
= 25 V
0.85
1.5
V
t
rr
Q
r
30
30
ns
nC
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