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參數(shù)資料
| 型號(hào)： | BSP255 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | P-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 0.325 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大小： | 65K |
| 代理商： | BSP255 |
1996 Aug 05
10
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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