參數(shù)資料
型號: BSP255
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: P-channel enhancement mode vertical D-MOS transistor
中文描述: 0.325 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 2/10頁
文件大?。?/td> 65K
代理商: BSP255
1996 Aug 05
2
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSP255
FEATURES
Direct interface to C-MOS, TTL etc
Low threshold voltage
High speed switching
No secondary breakdown.
APPLICATIONS
Line current interrupter in telephone sets
Relay, high speed and line transformer drivers.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a 4-pin plastic SOT223 SMD package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT223
PIN
SYMBOL
DESCRIPTION
1
2
3
4
g
d
s
d
gate
drain
source
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM121
4
1
2
3
Top view
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
300
1.8
±
20
2
325
17
4
UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
0.8
V
V
V
V
mA
W
I
S
=
0.5 A
I
D
=
1 mA; V
DS
= V
GS
T
s
= 100
°
C
I
D
=
160 mA; V
GS
=
10 V
T
s
= 100
°
C
相關(guān)PDF資料
PDF描述
BSS92 P-channel enhancement mode vertical D-MOS transistor
BSS92 P-Channel 200-V (D-S) MOSFETs
BSV52L TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-23
BSV52 Surface mount Si-Epitaxial PlanarTransistors
BSV62SMD05 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | SMT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSP280 制造商:Siemens 功能描述:
BSP295 制造商:Infineon Technologies AG 功能描述:MOSFET N LOGIC SOT-223 制造商:Infineon Technologies AG 功能描述:MOSFET, N, LOGIC, SOT-223 制造商:Infineon Technologies AG 功能描述:MOSFET, N CH, 60V, 1.8A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.1V ;RoHS Compliant: Yes 制造商:Infineon Technologies AG 功能描述:MOSFET N-Channel 60V 1.8A SOT223
BSP295 L6327 功能描述:MOSFET N-CH 60V 1.8A SMALL SIGNAL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSP295 制造商:Infineon Technologies AG 功能描述:MOSFET N LOGIC SOT-223
BSP295_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal-Transistor